High-Temperature Electronics in Europe

Abstract

Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

White light emission of wide‐bandgap silicon carbide: A review

“…7,9,10 This efficiency has been realized depending on doping concentrations, the relation between n-and p-type doping, and point defects that are mainly controlled by the growth process parameters. [11][12][13] With the increasing emphasis on device efficiency and reliability, white light-emitting diode (LED) light sources considered as next-generation solid-state lighting systems are becoming the future market leader owing to their energy savings, high efficiency, compactness, robustness, environmental friendliness, and long lifetime compared to conventional incandescent lamps and fluorescent tubes. 14 They have shown outstanding contributions to greenhouse gas reduction and environmental protection by minimizing energy consumption for illumination.…”

“…Even though SiC is an indirect bandgap semiconductor, it has been reported that it can produce donor–acceptor pair (DAP) luminescence with extremely high quantum efficiency when it is doped 7,9,10 . This efficiency has been realized depending on doping concentrations, the relation between n‐ and p‐type doping, and point defects that are mainly controlled by the growth process parameters 11–13 …”