No abstract

White light-emitting diodes (LEDs) are the most promising alternative to the conventional lighting sources due to their high efficacy and energy saving in illumination. Silicon carbide (SiC) has a wide optical bandgap and could be tailored to emit light at different wavelengths across the entire visible spectrum by introducing different dopants. Donor and acceptor (DA) co-doped fluorescent SiC (f-SiC) is a potential candidate for replacing phosphor material in white LEDs, as it has been observed as a good wavelength converter overcoming the disadvantages of rare earth-containing phosphors, such as poor color-rendering index (CRI), short lifetime, and short degradation time. The current study attempts to present an overview on the available approaches to fabricate f-SiC for generating the white light emission and challenges in fundamental research issues to enhance quantum efficiency, color rendering performance, stability, reproducibility of color quality, and lifetime of f-SiC.

For utilizing the outstanding energy absorbing capacity of highly elastic carbon nanotube (CNT), bulk multiwalled CNT (MWCNT) structure containing 15 wt% alumina (Al2O3) was fabricated using spark plasma sintering at 1600°C for 10 min under 50 MPa. The compacted mass was ~85% dense having morphologically stable MWCNTs. Microindentation studies up to 9.81 N indicated outstanding elastic recovery of the bulk structure leaving only a diffused indentation mark at indenter‐specimen interaction zone. Quantitative estimation of elastic response behavior of the fabricated structure using instrumented nanoindentation in 10–300 mN load range indicated promising applicability of Al2O3/MWCNT compact structure as energy absorbing material.

No abstract

No abstract