High Temperature Data Converters in Silicon Carbide CMOS

Rahman, Ashfaqur; Caley, Landon; Roy, Sajib; Kuhns, Nathan; Mantooth, Alan; Di, Jia; Francis, A. Matthew; Holmes, Jim

doi:10.1109/ted.2017.2665520

Cited by 16 publications

(4 citation statements)

References 24 publications

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“…A decade ago, Raytheon Systems Limited developed a proprietary 1.2 μm SiC CMOS technology, called high temperature silicon carbide (HiTSiC), and demonstrated integrated circuits [14], [15]. The group of Mantooth at the University of Arkansas demonstrated a comparator [16], 8-bit digitalto-analog converter (DAC) [17], voltage and current references [18], gate driver [19], complex digital circuits [20], protection circuits in voltage regulators and switch-mode converters [21], digitally controlled pulsewidth modulation (PWM) generator [22], and data converters [23]. However, the HiTSiC technology was discontinued in 2018.…”

Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

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Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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“…A foundation of SiC CMOS designs has been established with a multitude of mixed-signal circuitry including op-amps, bandgap references, and data converters [8], [44]. More complex designs will be formed by building upon the experience gained in previous design and testing phases.…”

Section: Extending the State Of The Art Sic Ic Technologymentioning

confidence: 99%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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Abstract-The emergence of wide bandgap power semiconductor devices has opened the possibilities of improved electrical performance and power density. Advanced research into wide bandgap power electronics also includes advances in integrated circuit design, semiconductor device modeling, 3D electronic packaging, and computer-aided design of wide bandgap based electronics. These emerging trends are described along with some early results indicating the additional improvements possible in power density. Operation at extreme temperatures also becomes more feasible.Index Terms-Gallium nitride, power integrated circuits, power semiconductor devices, power electronics, silicon carbide, wide bandgap semiconductors.

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“…A simple analog amplifier and a NOT logic gate reported in [23] were fabricated using 6H-SiC JFET technology and were successfully operated for thousands of hours at 500 °C. The authors in [24] report the first analog-to-digital converter (ADC) implemented using SiC along with the first CMOS digital-to-analog converter (DAC). These circuits were tested in the 25 °C to 400 °C temperature range.…”

Section: Introductionmentioning

confidence: 99%

A GaN-Based Wireless Monitoring System for High-Temperature Applications

Hassan

Ali

Trigui

et al. 2019

Sensors

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A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C).

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High Temperature Data Converters in Silicon Carbide CMOS

Cited by 16 publications

References 24 publications

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Emerging Trends in Silicon Carbide Power Electronics Design

A GaN-Based Wireless Monitoring System for High-Temperature Applications

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