High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

“…The other approach is to grow QW lasers on GaInAs or quasi-GaInAs substrates. [5][6][7][8][9][10] The larger the In content of the substrate ͑x sub ͒ is, the smaller the strain of the well layer becomes. Recently, we fabricated GaInAs/ GaInAs QW lasers on low-In-content GaInAs ͑x sub = 0.1͒ substrates with the operating wavelength of 1.28 m and the characteristic temperature T 0 of 130 K, 8 although large strain ͑ Ͼ 2%͒ was still required in the well layer.…”

1.3 μm-Band Laser with a High Characteristic Temperature (T0=130 K) on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

“…Among the many competing active layer materials, a quantum well on an InGaAs ternary substrate is advantageous for controlling the lattice constant and energy band gap and thereby provides a large conduction band offset for 1.3 µm lasers [1]. Lasers on ternary substrates with high characteristic temperatures (T 0 =140K: 20-50 ºC, 99K: 50-70 ºC@1.22 µm) [2] and that operate at high temperature (210 ºC@1.22 µm) [3] have been reported. These reported lasers with high T0 (> 100K) are HR-coated and short-wavelength (<1.26 µm) devices.…”

Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition

“…This technique was motivated by the potential use for novel semiconductor substrates with flexible choice of lattice and band parameters, which gives additional flexibility to the present ''band engineering''. For example, ternary InGaAs substrates are promising for 1.3 mm semiconductor lasers with high characteristic temperature [1,2] attention for advanced microelectronic and optoelectronic devices, which could surpass conventional Si [3].…”