Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

Fujisawa, Takeshi; Arai, M.; Yamanaka, T.; Kondo, Y.; Kano, F.

doi:10.1063/1.3126522

Cited by 5 publications

(2 citation statements)

References 20 publications

(35 reference statements)

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“…Although FCT is easy to use for obtaining optical properties of QWs, it needs an experimental fitting parameter (relaxation time) associated with optical spectrum broadening originating from scattering phenomena in semiconductors. Results obtained by FCT are greatly affected by the fitting parameter (shown later), and it was demonstrated that spectral positions and the spectral shapes obtained by FCT are not consistent with the experiment [10][11][12][13][14]. Therefore, it is difficult to grasp the inherent optical properties of GeSn QWs if FCT is used for the analysis.…”

Section: Introductionmentioning

confidence: 99%

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Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Fujisawa

Saitoh

2015

IEEE J. Quantum Electron.

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Abstract-Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate by using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics. MBT can take into account a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any artificial fitting parameters, such as a relaxation time, used in conventional analysis. Not only Γ-but also carrier distributions in L-points are considered for the gain analysis. By using MBT, the quantum well structures maximizing the material gain and the differential gain at the threshold are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between Γ-and L-points.Index Terms -Mid-infrared photonics, Si photonics, GeSn quantum wells, and many-body theory.

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Section: Introductionmentioning

confidence: 99%

“…In this paper, the material gain of GeSn/SiGeSn QWs is investigated for mid-IR Si-photonics light sources by using microscopic many-body theory (MBT) [10][11][12][13][14][15]. MBT does not need any fitting parameters used in FCT to obtain optical properties of QWs and only needs basic bulk band parameters.…”

Section: Introductionmentioning

confidence: 99%

Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Fujisawa

Saitoh

2015

IEEE J. Quantum Electron.

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The effect of nitrogen on the diamagnetic susceptibility of a donor in quantum well under the magnetic field

Kılıçarslan

Şakiroğlu

Kasapoğlu

et al. 2010

Superlattices and Microstructures

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Many-body design of highly strained GaInNAs electroabsorption modulators on GaInAs ternary substrates

Fujisawa¹,

Arai²,

Kano³

2010

Journal of Applied Physics

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Electroabsorption in highly strained GaInAs and GaInNAs quantum wells (QWs) grown on GaInAs or quasi-GaInAs substrates is investigated by using microscopic many-body theory. The effects of various parameters, such as strain, barrier height, substrate composition, and temperature are thoroughly examined. It is shown that the value of the absorption coefficient strongly depends on the depth of the QWs under large bias electric field due to the small overlap integral of wave functions between the conduction and valence bands. The use of GaInNAs QWs makes the strain in the well layer very small. Further, the effective quantum-well depth is increased in GaInNAs QWs due to the anticrossing interaction between the conduction and N-resonant bands, making it possible to obtain larger absorption coefficient under large bias electric fields without using wide-band gap materials for barriers.

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Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

Abstract: Articles you may be interested inDesign and modeling of InP-based InGaAs/GaAsSb type-II "W" type quantum wells for mid-Infrared laser applications J. Appl. Phys. 113, 043112 (2013); 10.1063/1.4789634Theoretical study of Auger recombination in a GaInNAs 1.3μ m quantum well laser structure

Cited by 5 publications

References 20 publications

Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

The effect of nitrogen on the diamagnetic susceptibility of a donor in quantum well under the magnetic field

Many-body design of highly strained GaInNAs electroabsorption modulators on GaInAs ternary substrates

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