Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition

2010

Cryst. Res. Technol.

Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

2010

Cryst. Res. Technol.

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“…The LPD system can also be used as a single process to produce SiGe crystal with uniform axial silicon composition. Once the desired silicon composition is achieved at the stationary mode, at that time the LPD crucible (or the heater) can be translated at a speed matching the mass transport rate of silicon in the melt to produce single crystal SiGe with uniform Si composition for the rest of the growth cycle [22].…”

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

2013

Acta Phys. Pol. A

The silicon transport in a silicongermanium melt has been studied to address the issues of melt replenishment and seed production for the Czochralski growth of silicon germanium (SiGe) crystals. The growth of SiGe single crystals by the Czochralski method requires that the melt be replenished with silicon during the growth process due to the rejection of germanium into the melt during solidication. To facilitate the replenishment of the melt, an accurate knowledge of the dissolution rate of silicon into the melt and its transport through the melt is required. To address these issues, a number of experiments have been carried out on the dissolution of silicon into a germanium melt. Liquid phase diusion growth experiments were also conducted for insight into transport and as a possible method for seed crystal production. The experiments encompassed various temperatures, crucible geometries, crucible translation, and magnetic eld levels to determine optimum conditions for the most favorable dissolution rates and mass transport in the melt. Results have shown that replenishment from bottom of the crucible is most eective due to the enhanced silicon transport by buoyancy. The application of magnetic elds may also provide an eective mean to control the replenishment rate (mass transport rate) in the melt.

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“…Bulk SiGe specifically has applications in photodetection, photovoltaics, thermal imaging and as a substrate for SiGe epitaxial layers [2]. The substrates can be lattice matched to the device layer, reducing strain.…”

Section: Introductionmentioning

confidence: 99%

Effect of an applied static magnetic field on silicon dissolution into a germanium melt

Journal of Crystal Growth

2009