Effect of an applied static magnetic field on silicon dissolution into a germanium melt

Armour, N.; Dost, S.

doi:10.1016/j.jcrysgro.2008.09.156

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…Striations in SiGe crystals were observed in liquid-phase diffusion crystal growth by Yildiz and co-workers on the ground. , However, no growth striations were observed during SiGe crystal growth experiments by Armour and Dost with a direct current furnace and an applied magnetic field. The melt convection producing the growth striations can be depressed by an electromagnetic force.…”

Section: Introductionmentioning

confidence: 98%

Study of SiGe Crystal Growth Interface Processed in Microgravity

Arai

Kinoshita

Tsukada

et al. 2018

Crystal Growth & Design

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A Si 1−x Ge x (x ∼ 0.5) crystal measuring 10 mm in diameter was grown by the traveling liquidus zone method using the Gradient Heating Furnace aboard the International Space Station. We quantitatively investigated the composition and shape of the crystal/melt interface during growth by analyzing the grown crystal. The growth interface shapes were obtained by tracing the striations that varied as a result of modulation of the interface near the Si seed to a smooth convex shape as the SiGe crystal growth proceeded. We also successfully measured the Ge concentrations on the interface using an electron-probe microanalyzer. Several growth interfaces showed a highly uniform Ge composition within mole fraction ±0.0005. Detailed measurements of the shapes and the Ge concentrations on those interfaces revealed that millimeter-scale Ge concentration gradient fluctuations existed for more than 16 h in a nonsteady and unsaturated SiGe melt in front of a crystal growth interface grown under microgravity conditions.

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Section: Introductionmentioning

confidence: 98%

Study of SiGe Crystal Growth Interface Processed in Microgravity

Arai

Kinoshita

Tsukada

et al. 2018

Crystal Growth & Design

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“…The flow intensity decreases with the increasing of the magnetic field strength. There are many studies that discuss the influence of either magnetic field or AHP, such as [17][18][19]. Crystal growth under the effect of crystal and crucible rotations has been regarded as another way to achieve growth control.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of Ge_xSi_{1-x} single crystals

Abbasoğlu¹

2012

Turkish Journal of Electrical Engineering and Computer Sciences

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The influence of crystal and crucible rotations on the flow field and the radial segregation of silicon are predicted during the growth of Ge x Si 1−x crystals by the Czochralski method under microgravity conditions. Time-dependent 3-dimensional numerical simulations are carried out to present the influence of several rotation rates on the radial segregation and flow fields during the growth of Gex Si 1−x . Thermal and solutal Marangoni convection are also considered during this study. Different crystal rotation rates varying between 0 and 30 rpm and stationary or -2 rpm crucible rotation rates are considered. The results show that the crystal and crucible rotation rates have significant influence on the flow field and radial segregation. It is clear that crystal and crucible rotations with an optimum rotation rate lead to good mixing along the growth interface and result in a crystal with a uniform concentration distribution.

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“…As a continuation of the dissolution experiments performed earlier [8][9][10], along with further dissolution experiments we have performed a numerical analysis of the dissolution process with and without the effect of a vertical static applied magnetic field (8 kG).…”

Section: Introductionmentioning

confidence: 99%