Abstract:We have developed high-performance 1.3 µm-band laser diodes on an InGaAs ternary substrate with a low indium content (In: 0.1) grown by a novel bulk crystal growth technique (TLZ method). This laser operates at a long wavelength of 1.28 µm and at temperatures up to195 °C by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95 ºC and 95 K from 95 to 155 °C.
Introduction1.3 µm lasers with excellent temperature characteristics are required for low-cost telecom devic… Show more
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