High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

Abstract

InGaN-based micro-light-emitting diodes (µ-LEDs) emitting at 470 nm and composed of micropixels each with controlled shaping achieves directed light output with an angular full width at half maximum of 48°. The reflected light from the mesa sidewalls is azimuthally polarized. The small signal bandwidth of an individual µ-LED is >500 MHz. A cluster of 14 µ-LEDs is used to achieve a large signal data transfer rate of 500 Mbps in a form which is compatible with communication over plastic optical fibre.

Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED

“…The introduction of micro-LEDs has enabled high-performance value-added lighting functions such as VLC and indoor positioning and tracking [3]. Micro-LEDs are known for their small active areas enabling high current density injection, which drives the modulation bandwidth to hundreds of megahertz [4,5]. At 450 nm, micro-LEDs have set the standard for high-speed VLC.…”

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

“…These devices have some advantages over larger conventional LEDs, such as high modulation bandwidths [1], reduced device selfheating [2], and higher optical output power densities [3], and have been demonstrated for applications as diverse as visible-light communication (VLC) [1], [4], [5], microdisplays [6], opto-electronic trapping of cells [7] and maskfree photolithography [8].…”

High speed spatial encoding enabled by CMOS-controlled micro-LED arrays

“…Modulation bandwidths in excess of 400 MHz have now been reported by several groups working on micro-LEDs [1], [2], [3], limited by the carrier lifetime. Consequently, data rates up to 5 Gb/s have been achieved with a single micro-LED as emitter by employing higher order encoding schemes [4], [5].…”