High-Speed Planar GaAs Nanowire Arrays with f_max > 75 GHz by Wafer-Scale Bottom-up Growth

Abstract

Wafer-scale defect-free planar III-V nanowire (NW) arrays with ∼100% yield and precisely defined positions are realized via a patterned vapor-liquid-solid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (ION/IOFF), cutoff frequency (fT), and maximum oscillation frequency (fmax) are 10(4), 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 × 1.5 cm(2) chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics.

High frequency III–V nanowire MOSFETs

“…A method have developed for lateral VLS-type of nanowire growth, so called selective lateral epitaxy [64][65][66] . Au seed particles are deposited on a (001) or (110) substrate, typically GaAs.…”

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

“…III-V nanostructures have gained increasing attention over the last years due to their prospects in a wide range of applications such as high-speed electronics, 1 optoelectronics, [2][3][4] thermoelectrics 5 and photovoltaics. 6,7 Their small dimensions and tailored shapes can be used to modify the inherent semiconductor properties, thus extending their range of application.…”

Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires

“…Therefore, the chapter consists of three following sections: electrical, mechanical, and electromechanical properties of NWs and represents methods of their investigation by modern SPM approaches. Latter means that magnetic [32][33][34][35], optical [29,[36][37][38][39], acoustic [10,[40][41][42][43][44][45], catalytic [46], and other properties [47][48][49] will not be reflected in recent chapter due to format limitations but are proposed to be accessed from the denoted comprehensive works.…”