Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

Application of Kelvin probe force gradient microscopy (KPFGM) to visualize the local charge dissipation in thin dielectric layers is considered. By this method, the local charge behavior in nano thin SiO2, Si3N4, and LaScO3 dielectric layers has been studied. Local charging of the layers has been performed at the point contact with a conductive probe. KPFGM potential images reveal variations of the surface potential in the locally charged areas, which makes it possible to detect the injected charge and to study its behavior. Special experiments on the SiO2 layers with embedded Si-nanocrystals, when lateral spreading of injected charge had been suppressed, permitted to demonstrate high (better than 20 nm) lateral resolution of KPFGM observations. A simple electrostatic model has been developed to estimate the total amount of injected charge. The obtained estimations made it possible to control charge retention in the dielectric layer and possible leaks into the substrate. The studied dielectric layers demonstrate a broadening of the charged area with time t, proportionally to t1/2, what indicates the domination of the diffusion mechanism in charge lateral spreading on the large time scale. These observations permitted to determine the diffusion coefficients, mobilities, and diffusion activation energies for charges in the studied dielectric layers. To obtain the correct information on the injected charge behavior, the parasitic charge dissipation through the surface film of adsorbed water should be reduced to a negligible level. It was achieved by working in moderate vacuum conditions with an additional sample heating.

Generation of electric current is observed when GaAs nanowires with wurtzite crystal structure are bent by the probe of an atomic force microscope. The current originates from a piezo active phase in the nanowires due to the piezoelectric effect. Increasing of the piezo-potential in bent nanowires enhances tunneling through the probe-nanowire Schottky barrier due to the thermionic field emission. Laser illumination amplifies short-circuit current pulses by two orders of magnitude from 9 pA to 1 nA due to the piezo-phototronic effect. Utilization of such piezo-phototronic effect in GaAs nanowires is a solution to accelerate the efficiency of hybrid energy sources "piezoelectric nanogenerator À solar cell" comprised of III-V nanowires.

Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al Ga As (0 ≤ x ≤ 0.45) and Ga In As (0 ≤ x ≤ 1) alloys is pinned at the same position of 4.8 ± 0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al Ga As and Ga In As nanowires leads to the accumulation of an excess of arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.

Harvesting hybrid mechanical and solar ambient energy with one small device remains a challenge. Here, we report on producing electric current using a Schottky type metal-oxide-semiconductor structure formed by an n-InP layer covered with native oxide and an atomic force microscope (AFM) probe with a conductive coating. The tip’s sliding reciprocating motion during AFM scanning in contact mode produces a direct current signal in the probe-sample circuit. Two electric power generation mechanisms exist. A strong current was detected under sample illumination because of a photovoltaic effect with efficiency of 7% at the Si/InP heterojunction. Having the sample set in complete darkness, we observed current pulses of the opposite polarity, which suggests the existence of another mechanism not connected to photogeneration. This dark current originates from the tunneling of triboelectrically induced charge redistribution on the metal/oxide interface. The current polarity corresponds to electronic quantum mechanical tunneling through the oxide layer from the metal tip into InP. The current density exceeded 15 kA/m2. This is 2 and more than 4 orders greater than that in silicon- and polymer-based triboelectric nanogenerators, respectively. The open-circuit voltage value was 15 mV, and output electric power reached 110 W/m2. Understanding of triboelectric phenomena in photovoltaic semiconductor materials will allow creation of a new type of high-current hybrid energy devices that combine triboelectric nanogenerators and solar cells.

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