GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

Raya, Andrés M.; Friedl, Martin; Martí‐Sánchez, Sara; Dubrovskiı̆, V. G.; Francaviglia, Luca; Alén, Benito; Morgan, Nicholas; Tütüncüoǧlu, Gözde; Ramasse, Quentin M.; Fuster, David; Llorens, Jorge Cardona; Arbiol, Jordi; Morral, Anna Fontcuberta i

doi:10.1039/c9nr08453c

Cited by 13 publications

(15 citation statements)

References 64 publications

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“…18 A particular approach corresponds to selective area epitaxy (SAE). [30][31][32][33][34][35][36][37] In SAE, growth is restricted to certain (oen nanoscale) regions of the substrate, which can be dened through e.g. electron beam lithography, nanoimprint lithography or stepper photolithography, with the latter one being compatible with highthroughput manufacturing.…”

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confidence: 99%

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

et al. 2021

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confidence: 99%

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

et al. 2021

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“…The morphology, sketched in panel (c), looks quite consistent with the trapezoidal ones of Refs. [1,17,18], even if facets are not as sharp. In…”

Section: Resultsmentioning

confidence: 99%

“…In particular, along the six <112> directions (see panel b), vertical nanomembranes are observed, analogous to the ones of Figure 2, despite the shorter spacing. In the six <110> directions, the {110} sidewalls are instead sloped with respect to the virtual substrate plane, so that the fin shape corresponds to a slanted, isosceles trapezoid [1,18], as the one reported in Figure 3c. Due to the 3-fold symmetry of the (111) plane, the side toward which the slanted fins are tilted alternates, as sketched in panel (a).…”

Section: Resultsmentioning

confidence: 99%

“…In the quest for advanced opto-electronic materials, the integration of III-V semiconductor devices with silicon technology is one of the most topical challenges. The exploitation of the optical and electronic know-how of III-V technology, along with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon, is an important goal for the new opto-electronic devices [1]. The approach to the realization of semiconductor devices is different depending on the choice of the substrate, Si versus III-V.…”

Section: Introductionmentioning

confidence: 99%

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Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

et al. 2020

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We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.

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“…4c) [101][102][103], however, the dimensional control with SOI wafer is much better. Many compound semiconducting materials including GaAs [104][105][106][107], GaN [108], and InP [109] have been obtained in a conceptually similar manner to that of Si shown in Fig. 4b-c.…”

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confidence: 86%

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

et al. 2020

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The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

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GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

Abstract: Selective area epitaxy of GaAs nanoscale membranes on silicon. Small apertures result in a majority defect-free structures.

Cited by 13 publications

References 64 publications

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

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