High-speed interdigitated Ge PIN photodetectors

Oh, Jungwoo; Csutak, S.M.; Campbell, Christopher

doi:10.1109/68.986816

Cited by 42 publications

(8 citation statements)

References 7 publications

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“…The bandwidth for the Si/SiGe buffer sample is limited by the transit time with the carrier mobility being close to the theoretical Ge mobility. As the electrode spacing is 1.5 µm wide, the highest bandwidth is limited but still comparable to the results for the Ge photodetector on a Si substrate [15]. In contrast, those of SiGe buffer shows significant speed degradation with a long transient tail.…”

Section: Resultssupporting

confidence: 56%

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Loh

Wang

et al. 2007

IEEE Electron Device Lett.

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This letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on highperformance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (∼6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (∼150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ∼ 0.67 nm) and low dislocation density (4 × 10 6 cm −2 ) have been produced. The Si buffer locally enhances the tensile strain (ε = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 µA (with circular ring area = 1230 µm 2 and spacing = 2 µm). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ∼190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V.

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Section: Resultssupporting

confidence: 56%

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Loh

Wang

et al. 2007

IEEE Electron Device Lett.

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“…Flexible thin-film transistors on single-crystalline unstrained Si, 1-4 tensile-strained Si, 5 GaAs, 6,7 and GaN ͑Ref. The small bandgap of Ge is compatible with making photodetectors for optical communication wavelengths of 1.3 and 1.55 m. [11][12][13] Of more importance, the hole mobility and low-field drift velocity of Ge are the highest among all types of semiconductors. These devices have not only retained the bendability, light-weight, and shockresistant features that plastic materials have to offer but also demonstrated superb performance such as high effective carrier mobility 1,5 and multigigahertz operation capability.…”

Section: Flexible Photodetectors On Plastic Substrates By Use Of Prinmentioning

confidence: 99%

Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes

Yuan

Shin

Qin

et al. 2009

Applied Physics Letters

117

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This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium ͑Ge͒ membranes. Ge membranes of 250 nm thickness with selectively ion-implantation doped regions were released from a germanium-on-insulator substrate and integrated with a 175-m-thick polyethylene terephthalate substrate via a dry printing technique. Photodiodes configured in lateral p-i-n configuration using the flexible Ge membranes with an intrinsic region width of 10 m exhibit an external quantum efficiency that varies from 5% at 411 nm to 42% at 633 nm under −1 V bias condition. These results demonstrate the potential of utilizing single-crystal Ge-membrane photodiodes for imaging applications and as solar cells on objects with arbitrary curvatures and shapes.

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“…However, compared to many direct gap III-V semiconductors, Ge offers poor light emission efficiency because although the electrons are promoted to the local conduction band minimum at the Γ point, they quickly scatter into the L minimum and the non-radiative transitions are the dominant recombination mechanisms at room temperature [7]. Nevertheless, Ge MSM detectors have been actively investigated for their relatively easy fabrication and high speed performance [8,9]. Due to their lateral geometry, MSM photodetectors have a much smaller capacitance per unit area in comparison to standard p-i-n photodiodes with the same active area [10].…”

Section: Introductionmentioning

confidence: 99%

Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths

Lodari¹,

Biagioni²,

Ortolani³

et al. 2019

Opt. Express

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We demonstrate the use of plasmonic effects to boost the near-infrared sensitivity of metal-semiconductor-metal detectors. Plasmon-enhanced photodetection is achieved by properly optimizing Au interdigitated electrodes, micro-fabricated on Ge, a semiconductor that features a strong near IR absorption. Finite-difference time-domain simulations, photocurrent experiments and Fourier-transform IR spectroscopy are performed to validate how a relatively simple tuning of the contact geometry allows for an enhancement of the response of the device adapting it to the specific detection needs. A 2-fold gain factor in the Ge absorption characteristics is experimentally demonstrated at 1.4 µm, highlighting the potential of this approach for optoelectronic and sensing applications.

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High-speed interdigitated Ge PIN photodetectors

Cited by 42 publications

References 7 publications

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes

Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths

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