Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes

Abstract

This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium ͑Ge͒ membranes. Ge membranes of 250 nm thickness with selectively ion-implantation doped regions were released from a germanium-on-insulator substrate and integrated with a 175-m-thick polyethylene terephthalate substrate via a dry printing technique. Photodiodes configured in lateral p-i-n configuration using the flexible Ge membranes with an intrinsic region width of 10 m exhibit an external quantum efficiency that varies from 5% at 411 nm to 42% at 633 nm under −1 V bias condition. These results demonstrate the potential of utilizing single-crystal Ge-membrane photodiodes for imaging applications and as solar cells on objects with arbitrary curvatures and shapes.

Inorganic semiconducting materials for flexible and stretchable electronics

“…69 Flexible arrays of PIN photodetectors fabricated with Ge NMs from germanium on insulator wafer (GeOI) offer excellent performance even after the severe bending. 70 In another example, alternating stacks of gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) serve as the starting point for creating large quantities of GaAs NMs by selective removal of the AlGaAs with hydrofluoric acid. shows an illustration of GaAs and AlGaAs stacks on a bulk GaAs wafer and release of GaAs NMs by selective HF etching.…”

Rapid Prototyping across the Spectrum: RF to Optical 3D Electromagnetic Structures

“…The photodetectors exhibited a quantum efficiency of 5% at 411nm and 42% at 633nm with -1V bias. The low quantum efficiency is presumed to be due to shallow penetration depth and high photocarrier recombination at surface traps which may be mitigated using surface passivation [145]. In addition to detectors, sources such as silicon hybrid lasers have also been demonstrated using NM technology by combining Si with III-V gain media.…”

“…(e) Structure generated with mask 2 and 355-nm light, (f) Structure generated from mask 2 with 514-nm laser light. The top layer of this structure, which is shown in the modeling, peeled off because of its thin connecting features to the underlying structure, (g) Structure generated with mask 3, (h) Close-up view of tilted (100) Figure 18: (a) Array of finished PIN diodes on a bent PET substrate [145], (b) and (c) shows transferred III-V InGaAsP quantum well heterostructure as the gain medium sandwiched between single layer Si photonic crystal membrane reflectors using multilayer stacked nanomembranes [146], (d) micrograph of 3x3 mm patterned nanomembrane transferred onto a 1x1" flexible PET substrate [148], (e) Image of fabricated photonic devices on Au coated PET substrate, (f) photo of a prototypical flexible optical link [149] . …”

Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

“…In the recent past, inorganic substrates like silicon on insulator (SOI) and silicon (111) have been used to peel off nano-ribbons or partially processed devices from them followed by polymer based transfer onto flexible substrates like plastic, aluminum foil, etc. [6][7][8][9][10][11][12][13][14] Although many exciting demonstrations have been reported, challenges remain with usage of expensive SOI substrates, unconventional silicon (111), high resolution alignment, etc. Today's high performance devices used in computers and communication devices has clock speed of 3.2 GHz and 1.8 GHz, respectively.…”