High-Speed Heat Removal for VLSI Using AIN Heat-Spreading Layer and Microchannel Fin

Abstract

Katahira z-L-L, Aoba-ku, Sendai 980, Japan We propose a microchannel fin package utilizing a passivation layer of AIN as the heat spreader and a microchannel fin as the efficient heat removal method. AIN film has high thermal conductivity and compatibility with the thermal expansion coefficient of Si. A microchannel fin has 4 fold 1-00 lines of 50pm x 250pm channels on a Lcm2 chip and is cooled by water coolant. Thermal capability of our new package was evaluated by the simulator of dynamic thermal analysis. We found that the chip temperature was below 47"Ceven at a power density of 1.5kWcm2.