High-speed and highly accurate evaluation of electrical characteristics in MOSFETs

Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.1109/icicdt.2013.6563333

Cited by 5 publications

(2 citation statements)

References 26 publications

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“…Figure 3 shows a circuit schematic diagram of the newly developed platform. The platform employs architectures of an array test circuit [45][46][47][48][49][50] to achieve a high-speed measurement with a large number of DUTs. The arrayed DUTs are selected by vertical and horizontal shift resisters (VSR and HSR).…”

Section: Experimental Methodsmentioning

confidence: 99%

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Maeda¹,

Omura²,

Kuroda³

et al. 2020

Jpn. J. Appl. Phys.

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We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R ON ), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R ON exclusion was confirmed using 6000 Poly-Si cells.

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Section: Experimental Methodsmentioning

confidence: 99%

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Maeda¹,

Omura²,

Kuroda³

et al. 2020

Jpn. J. Appl. Phys.

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show abstract

“…Array test circuits have also been proposed to measure the small current of DUTs, such as leakage current across capacitors and p-n junction leakage current. [22][23][24][25][26][27][28] Using them, the leakage current of DUTs can be measured for statistical evaluation of the electrical characteristics such as stress-induced leakage current (SILC) of MOSFETs. Toward evaluation of emerging memory materials with high versatility, an array test circuit platform for measuring the resistance of memory materials has been proposed where DUTs are formed on the platform circuit in an additional process with simple steps.…”

Section: Introductionmentioning

confidence: 99%

A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

Saito

Suzuki

Park

et al. 2021

Jpn. J. Appl. Phys.

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This paper presents a current measurement platform to measure current across dielectrics with a high-precision of 10−17 A from a large number of small capacitors at high speed. The developed platform consists of a common readout circuit part and a dielectric part formed on the circuit part by a simple process. A platform chip with 10 μm pitch 384H × 360V cells was fabricated using a 0.18 μm CMOS technology and silicon nitride (SiN) films were formed by plasma-enhanced CVD (PECVD) as a measurement target. The trap property of SiN films in metal–insulator–metal (MIM) capacitors was statistically measured by discharge current transient spectroscopy (DCTS) using the developed platform. The measured average energy levels of traps (E c –E t ) were 0.21–0.25 eV, which is in good agreement with that of the discrete samples. The distributions of energy levels and densities of traps measured with different film thicknesses and areas are also presented and discussed.

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Effect of Oxide Thickness Variation in Sub-micron NMOS Transistor

Radzi

Sanudin

2017

IOP Conf. Ser.: Mater. Sci. Eng.

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High-speed and highly accurate evaluation of electrical characteristics in MOSFETs

Cited by 5 publications

References 26 publications

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

Effect of Oxide Thickness Variation in Sub-micron NMOS Transistor

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