A specific criterion for judging whether the resist heating effect will occur under given beam and resist conditions is proposed. The criterion is directly applicable to direct-writing variably shaped electron-beam systems and chain-scission type resists. After studying the relationship between resist temperature and pattern deformation, it is hypothesized then verified experimentally that pattern deformation occurs when temperature at the shot edge point is higher than the glass transition temperature of the resist. Experiments revealed that chemically amplified resists are more resistant to the resist heating effect than chain-scission type resists. Applying the hypothesis to resist temperature calculations, a constant figure was derived that represents the criterion for high-throughput writing systems. The figure suggests the beam and resist conditions that are required for high-throughput pattern writing without the resist heating effect.
We developed high capacitance density and highly reliable Si deep trench capacitors with textured surface and SiN dielectric film. The developed capacitor consists of parallel unit cells with 14.3 μm depth textured surface trench capacitors, using Si wafer process compatible to 3D integration, realizing high scalability and versatility. Various fabrication conditions were experimented with to optimize the electrical characteristics. As a result, over 230 fF μm−2 capacitance density and 9.0 V breakdown voltage were achieved. Regarding reliability, it has been confirmed that SiN dielectric film leads to below 10−9 A cm−2 leakage current density at 1 V and the predicted lifetime of over 50 years at 3.3 V. For low voltage applications, higher capacitance density is available by using thinner SiN dielectric films.
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