High Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure

Abstract

A structure for single photon detection is analyzed. A special shape of photon detector electrodes on local 3D SOI structure is proposed. The structure of photon detector with a vertical local SOI MOS transistor is designed.

The Device-Technological Simulation of Local 3D SOI-Structures

“…Technology using thermal oxidation. To create local SOI structures, it was proposed to use the technology based on undercutting and surface migration [4], undercut of deep trench structures in SOI wafer [5], and deep trench etching in substrate [6][7]. The technology, based on deep trench etching, uses thermal oxidation or chemical etching of the cavity while forming a local SOI structure in the bulk substrate.…”

Micro- and Nanotextured Silicon for Antireflective Coatings of Solar Cells

“…Therefore, one of the major problems in the development of nanotechnologies for subsequent use in nanoelectromechanical devices is using cheap technologies to create Si nanostructures suitable for antireflective coatings of solar cells [7][8][9][10][11][12]. One of these technologies is a chemical etching, which has been compatible with the technology of micro-and nanoelectronic devices manufacturing for a long time [13,14]. Reducing the cost of surface textures of solar cells leads to exclusion of photolithography from the fabrication process, which is the most expensive part of solar cell manufacturing [15,16].…”