The Device-Technological Simulation of Local 3D SOI-Structures

Abstract

This paper presents the device-technological simulation of local 3D SOI structures. These structures are created by use microcavities under surface of silicon wafer. Is shown that proposed microcavities could be use as a constructive material for CMOS transistor array on the bulk silicon and 3D SOI-CMOS transistor array, as well as the sensitive elements and their combinations. Such structures allow creation and monolithic integration the CMOS, SOI-CMOS circuits and sensitive elements for IC and SoC.

Higly sensitive active medium of sensor NO2 , based on cholesteric nematic mixture with impurities of carbon nanotubes

“…The spectral characteristics and its changes under the action of nanocomposites based on HLC doped with carbon nanotubes tracked by the signal converter optical sensor. The main problem of creating signal converter of optical sensors discussed in work [24][25][26][27][28][29].…”

Structure and 3-D Model of a Solid State Thin-Film Magnetic Sensor

“…Implementation of 3D magnetic field sensors for magnetic tracking was presented in [14,15] and for labs instrumentationin [16]. Silicon on Insulator (SOI) 3-D structures for System-on-Chip Applications presented in [17], as well as, device-technological simulation of local 3-D SOI structuresin [18].…”

Methods of computer tools development for measuring and analysis of electrical properties of semiconductor films

“…Despite a large number of simplifications and assumptions, taking into account the effect of the surface and intergranular boundaries by methods and models described in [4,[8][9][10] allows determining the scattering of charge carriers that have a dominant effect on the electrical properties of the material. The authors of [11] have developed a technique for computer simulation of ready-made instrument structures, which demonstrates the powerful capabilities of modern computer research tools.…”

“…Approximating the results of the experiment by dependencies (5)- (7), one can obtain the charge carrier scattering coefficient by the film surface from the Fuchs-Sondheimer model. Using the dependency (11), one can obtain the mobility of charge carriers, which is related to the effect of intergranular boundaries. Development of software using fairly simple approximation algorithms with data visualization allows preliminary analysis of the obtained data already during the experiment.…”