High-resolution photoemission study of hydrogen interaction with polar and nonpolar GaAs surfaces

Petravić, M.; Deenapanray, Prakash; Usher, B. F.; Kim, K J; Kim, Bongsoo

doi:10.1103/physrevb.67.195325

Cited by 11 publications

(12 citation statements)

References 19 publications

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“…For the pass energy of 10 eV used in the present study, the total energy resolution was around 0.8 eV. All spectra were simulated with several sets of mixed GaussianeLorentzian functions with Shirley background subtraction [28].…”

Section: Methodsmentioning

confidence: 99%

The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

Katić

Metikoš‐Huković

Peter

et al. 2015

Journal of Power Sources

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Section: Methodsmentioning

confidence: 99%

The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

Katić

Metikoš‐Huković

Peter

et al. 2015

Journal of Power Sources

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“…The photoemission spectra were normalized to the photoelectron current of the primary photon beam and then simulated with several sets of mixed Gaussian-Lorentzian functions. 10 The low-resolution NEX-AFS spectra were recorded in the total electron yield mode around the nitrogen K edge, while the partial electron yield measurements were employed for the high-resolution NEXAFS. 11 The photon impact angle was 40°, measured from the sample surface.…”

Section: Methodsmentioning

confidence: 99%

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Božanić

Majlinger

Petravić

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure ͑NEXAFS͒ around N K edge. Interstitial molecular nitrogen N 2 has been formed in all of the samples under consideration. The presence of N 2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.

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“…The broad component related to gallium (hydro)oxides/chlorides shows a chemical shift of about 0.9 eV from the bulk Ga–P photoemission. It should be noted that the assignment of this component is very complex since both gallium monochloride GaCl, as well as gallium hydroxide GaOH, gallium suboxides and even gallium hydrate Ga–H fall in this range. The depth distribution of the ratio of Ga and In atomic concentration obtained from Ga 3d/In 4d spectra measured at four different excitation energies is presented in Figure .…”

Section: Resultsmentioning

confidence: 99%

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

et al. 2017

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(Photo)electrochemical processes occurring under cathodic polarization at the p-GaInP2(100)/1 M HClaq solution interface were investigated in detail by high-resolution surface sensitive synchrotron-radiation photoemission spectroscopy. It was found that on application of the cathodic bias in the dark to the p-GaInP2(100)/1 M HClaq solution interface the electrochemical processes are started at a bias of about −1.0 V vs reversible hydrogen electrode (RHE), where cathodic current passing through the semiconductor/electrolyte interface starts to rise. Under higher cathodic bias applied in the dark, hydroxyl groups and metallic gallium are accumulated at the surface, which is accompanied by a decrease in work function of the semiconductor. Accumulation of hydroxyl groups can be related only to splitting of water molecules at the semiconductor/electrolyte interface, since the aqueous HCl solution contains no hydroxyl groups intrinsically. Accumulation of hydroxyl groups and metallic gallium is accelerated under visible light illumination, which indicates participation of photogenerated electrons in the surface electrochemical reactions. The formation of the metallic gallium without simultaneous metallic indium formation testifies that the In–P bonds of the GaInP2 compound are more stable against cathodic corrosion than the Ga–P bonds.

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High-resolution photoemission study of hydrogen interaction with polar and nonpolar GaAs surfaces

Cited by 11 publications

References 19 publications

The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

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High-resolution photoemission study of hydrogen interaction with polar and nonpolar GaAs surfaces

Cited by 11 publications

References 19 publications

The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

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Product

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Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions