Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Božanić, Ana; Majlinger, Z.; Petravić, M.; Gao, Qiang; Llewellyn, David; Crotti, C.; Yang, Yaw‐Wen

doi:10.1116/1.2929851

Cited by 14 publications

(5 citation statements)

References 22 publications

(24 reference statements)

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“…The P 2 peak at 400.7 eV is associated with the N 1s to π * transition in the N-N species [19], which is a signature of molecular nitrogen. The energy and width of this resonance peak are very similar to the vibration structure of trapped N 2 previously observed in oxides and nitrides, such as ZnO [17], GaN [20], and InN [21], implanted with N ions. As a fingerprint technique for the bonding arrangement of a dopant in the lattice, the subtle variation of the P 2 parameters among the compounds confirms that this N 2 species interacts weakly with the surrounding matrix.…”

Section: Methodssupporting

confidence: 82%

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

et al. 2015

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X-ray absorption near-edge spectroscopy, photoluminescence, cathodoluminescence, and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: N O , N Zn , and loosely bound N 2 molecule. The results establish a direct link between a donor-acceptor pair emission at 3.232 eV and the concentration of loosely bound N 2 . This work confirms that N 2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)]. Additionally, shallow acceptor states arising from N O complexes have been ruled out in this paper.

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Section: Methodssupporting

confidence: 82%

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

et al. 2015

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“…N 2 substituted at a Cu site) a feasible product with a low formation energy, it gives rise to a shallow acceptor level and is perhaps the most feasible origin of p type doping. The binding energy of N 2 substituted at a Cu site is not clear, but in GaN and InN, implanted N + 2 is reported at ≈ E 405 B eV [33], consistent with our ≈ E 404 B eV peak. In addition to the data plotted in figure 3, the N 1s peak was also measured using higher photon energy (i.e.…”

Section: Resultssupporting

confidence: 88%

Robustp-type doping of copper oxide using nitrogen implantation

Jorge

Polyakov

Cooil

et al. 2017

Mater. Res. Express

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Copper oxide (Cu 2 O) is an abundant non-toxic intrinsic p-type semiconductor [1], with a long exciton lifetime [2], low-cost producibility, and a direct band gap of 2.1 eV. It has therefore attracted much attention in the photovoltaic solar cell community [1]. However, the discrepancy between the theoretical efficiency (approaching 12% [3]) and the efficiency actually achieved with technologies available (<2% [4,5]) resulted in a lack of further interest in Cu 2 O as a possible photovoltaic material. Besides the low efficiency obtained, another major drawback of Cu 2 O was the difficulty in controlling the electrical properties due to its intrinsic p-type conductivity as a result of copper vacancies [6]. More recently, there has been a resurgence of interest in Cu 2 O as a photovoltaic. In 2016, the highest Cu 2 O solar cell efficiency achieved had increased (to 8.1% [7]), but is still poor compared to competing materials.Luque et al proposed a concept of intermediate band solar cells (IBSCs) which can solve the problem of low efficiency: with the creation of a partially filled band within the band gap, the electrons not only jump from the valence band (VB) into the conduction band (CB) by absorption of at least the energy of the band gap (E g ) as in single gap solar cells, but also lower photon energies are absorbed, allowing the transition of carriers from the VB into the CB by using the IB as a 'stepping stone'. Therefore, the Shockley-Queisser limit [8] is overcome, making theoretical conversion efficiencies of such solar cells up to 20% higher than single gap solar cells [9]. Several major strategies exist for creating IBSCs: including multiple quantum dots layers [10], doping with highly mismatched elements [11] or doping with a suitable element which forms delocalized energy levels in the band gap [12,13] are all suggested as viable methods.The need to control the electrical properties of Cu 2 O translates into the need to select suitable elements with which dope the host material. Due to concerns of damaging or distressing the bulk host, and because it is not a standard industry method, ion implantation of high dopant densities is one of the least investigated methods of creating an IBSC [14]. Nevertheless, attempts to implant Cd, In and Cl in Cu 2 O have been made, and have shown promise [15][16][17]. Nitrogen also appeared as a promising dopant option, not only for being nontoxic, low-cost and easily accessible, but also because it has a similar atomic radius to oxygen, and hence may be possible to substitute,

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“…For example, in XPS, molecular nitrogen produces an additional peak in N 1s core-level photoemission spectra, shifted by several eV toward the higher binding energy from the main N 1s peak. 13,14 Indeed, the N 1s XPS spectra from ion-bombarded h-BN and c-BN exhibit such an additional peak, shifted by ϳ5.5 eV toward the higher binding energy, as shown in Fig. 7 after N 2 + bombardment.…”

Section: Resultsmentioning

confidence: 82%

“…The strong resonance at similar energy has been observed previously in several nitride compounds, such as GaN and InN, under either Ar + or N 2 + ion bombardment and associated with the characteristic N 1s → ‫ء‬ transition in molecular nitrogen. [13][14][15]28 Therefore, we assign the resonance P1 from Figs. 5 and 6 to molecular nitrogen.…”

Section: Resultsmentioning

confidence: 99%

“…12 Indeed, molecular nitrogen has been found in a range of III-N compounds bombarded with either argon or nitrogen ions. [12][13][14][15][16] In the present study we have employed near-edge x-ray absorption fine structure ͑NEXAFS͒ spectroscopy, using synchrotron radiation, to identify and characterize several boronand nitrogen-related point defects or to identify the presence of molecular nitrogen in h-BN and c-BN created by lowenergy argon or nitrogen ion-bombardment. We report on several new energy levels, identified within the band gap of ion-bombarded samples by NEXAFS measurements around boron and nitrogen K-edges.…”

Section: Introductionmentioning

confidence: 99%

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Formation of defects in boron nitride by low energy ion bombardment

Peter

Božanić

Petravić

et al. 2009

Journal of Applied Physics

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Formation of defects in hexagonal and cubic boron nitride ͑h-BN and c-BN, respectively͒ under low-energy argon or nitrogen ion-bombardment has been studied by near-edge x-ray absorption fine structure ͑NEXAFS͒ around boron and nitrogen K-edges. Breaking of B-N bonds for both argon and nitrogen bombardment and formation of nitrogen vacancies, V N , has been identified from the B K-edge of both h-BN and c-BN, followed by the formation of molecular nitrogen, N 2 , at interstitial positions. The presence of N 2 produces an additional peak in photoemission spectra around N 1s core level and a sharp resonance in the low-resolution NEXAFS spectra around N K-edge, showing the characteristic vibrational fine structure in high-resolution measurements. In addition, several new peaks within the energy gap of BN, identified by NEXAFS around B and N K-edges, have been assigned to boron or nitrogen interstitials, in good agreement with theoretical predictions. Ion bombardment destroys the cubic phase of c-BN and produces a phase similar to a damaged hexagonal phase.

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Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Cited by 14 publications

References 22 publications

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing

Robustp-type doping of copper oxide using nitrogen implantation

Formation of defects in boron nitride by low energy ion bombardment

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