The electronic structure of the α–Ni(OH)2 films: Influence on the production of the high–performance Ni–catalyst surface

Electrocatalytic oxidation of glucose by screening combinatorial copper–nickel alloys

“…However, a well‐defined anodic peak according to the Cu(OH) 2 /CuOOH redox couple was not clearly visible (Fig. a), which is in agreement with previous reports .…”

Oxidation of nickel surfaces by low energy ion bombardment

“…The low-energy oxygen implantation may represent an alternative method for thin oxide-film formation on Ni surfaces. It has been shown previously that ion-bombardment represent an attractive and feasible alternative for oxidation of different metallic and semiconductor surfaces with controlled amount of oxidation and oxide thickness, even at room temperature (RT) [6][7][8][9]. Indeed, in our previous study, we have shown that oxygen bombardment is more efficient in creating thin NiO films on Ni surfaces than oxidation by electrochemical methods [6].…”

“…It has been shown previously that ion-bombardment represent an attractive and feasible alternative for oxidation of different metallic and semiconductor surfaces with controlled amount of oxidation and oxide thickness, even at room temperature (RT) [6][7][8][9]. Indeed, in our previous study, we have shown that oxygen bombardment is more efficient in creating thin NiO films on Ni surfaces than oxidation by electrochemical methods [6]. In the present paper, we provide a detailed characterisation of nickel oxidation by low-energy oxygen ion bombardment at low temperatures using X-ray photoemission spectroscopy (XPS) and secondary ion mass spectrometry (SIMS).…”

Enhanced Oxidation of Nickel at Room Temperature by Low-energy Oxygen Implantation

“…The further growth of oxide films on Ni requires oxidation temperatures well above RT. The ion-induced oxidation of Ni induces several dramatic changes in the shape of Ni 2p photoemission peaks, as shown, as an example, in Figure 2 for bombardment of Ni surfaces with 2 keV O2 + ions for 300 and 3600 s, respectively (corresponding to Φ of 3.75×10 15 and 4.5×10 16 O atoms/cm 2 , respectively). The ion-bombarded spectra are fitted with several mixed Gaussian-Lorentzian functions 2-6 (in addition to the metallic, Ni(0), peak 1 and two satellites, 1' and 1'', from the cleaned sample): peak 2 at BE of 853.8 eV, peak 3 at 855.5 eV, and satellite peaks 4, 5 and 6 at 860.7, 863.9 eV and 866.2 eV, respectively.…”

“…[8,14] In addition, it has been shown that the oxygen implantation represents an attractive and feasible alternative for oxidation of Ni, even at RT, [15] that could be more efficient in creating thin NiO films on Ni surfaces than oxidation by some other methods, such as electrochemical methods. [16] In addition, the composition and thickness of oxides can be finely controlled, even at RT, simply by tuning the implantation parameters, such as impact angles and energies or doses of implanted oxygen. [15,[17][18][19][20] In the present study, we explore further the radiation-enhanced oxidation of Ni at RT by the low-energy oxygen ion-beam bombardment in order to examine the oxidation kinetics during initial stages of oxidation process.…”