High quality ZnTe heteroepitaxy layers using low-temperature buffer layers

Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy

“…However, a thin LT InSb buffer layer results in a large grain size and a low nucleation density, that leads to take too long time for the ARTICLE IN PRESS lateral growth of InSb islands and the quality of InSb layer becomes bad. So there exists the optimal thickness for the initial LT InSb buffer layer, that produce large lateral grain size and low nucleation density, and the lateral growth and coalescence of InSb islands will be promoted [15][16][17][18][19]. Based on the experimental results above, it is found that the 30 nm thick initial LT buffer layer is the optimal one for high-quality HT InSb layer.…”

Molecular beam epitaxy of GaSb layers on GaAs (001) substrates by using three-step ZnTe buffer layers

“…It was reported that the accommodation of lattice misfit is mainly accomplished by the LT buffer [6]. During the growth of the LT buffer, high-density misfit dislocations are generated by the relaxation of lattice mismatch.…”

“…However, the crystal quality of the GaSb layers has been restricted due to the large lattice mismatch to the conventional substrates. A lot of approaches have been tested to solve the problem [1][2][3][4][5][6][7]. Usually, a buffer layer with graded or staircase composition profile is adopted to grow high-quality GaSb heteroepitaxy [2].…”

ZnTe/GaAs(211)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

“…Therefore GaAs has been a very popular substrate for ZnTe growth by MBE [11,[13][14][15][16]. (2 1 1) is the major orientation for epitaxy of II-VI semiconductors such as CdTe or ZnTe on GaAs or Si [17][18][19] since these high index substrates provide a periodic array of energetically favourable sites at the surface as step edges formed by (1 0 0) crystal planes for initial nucleation in a uniform and regular fashion [20,21].…”