Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy

Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

“…This band was identified as been due to disorder-activated longitudinal acoustic (DALA) phonons [16]. Raman scattering is determined by the overlap integral of electrons, phonons and photons, the finite phonon mode will lead to the broadening and asymmetry of the Raman scattering line shape [18]. Therefore, the full-width at half-maximum (FWHM) and the asymmetry ratio (Γ a /Γ b ) of Raman scattering spectra can determine the alloy disorder, consequently characterize the crystalline quality of samples.…”

High-temperature growth of heteroepitaxial InSb films on Si(1 1 1) substrate via the InSb bi-layer

“…However, it is very difficult to grow heteroepitaxial InSb on Si, because of the large lattice mismatch of about 19.3% between them. To solve this difficulty, another material, such as GaAs, has been often used to reduce the lattice mismatch [1][2][3]. We have paid attention to the surface reconstructions induced by In and Sb atoms on the Si substrate at the initial stage of the growth of InSb films [4][5][6][7], and found that the use of a suitable reconstructed surface by atoms composing InSb is a good candidate to solve the lattice mismatch problem [7,8].…”

Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi‐layer on a Si(111) substrate

“…However, this is a challenging task because there is a large lattice mismatch between Si and InSb (19.3% for InSb/Si, 13.0% for AlSb/Si). To reduce the large lattice mismatch, other materials, such as GaAs, have been often used [1][2][3]. We have focused on the formation of an InSb bi-layer on Si(111) substrate to overcome this issue.…”