Molecular beam epitaxy of GaSb layers on GaAs (001) substrates by using three-step ZnTe buffer layers

Lee, Woong; Kim, Siyoung; Choi, S. M.; Lee, Hongchan; Lee, Sang‐Tae; Park, Seunghwan; Yao, Takafumi; Song, Joon-Suk; Ko, Hang-Ju; Chang, Jiho

doi:10.1016/j.jcrysgro.2007.04.015

Cited by 15 publications

(3 citation statements)

References 9 publications

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“…3. [36][37][38] The variation of the diffused scattering intensity measured by -and / 2-scan around the reciprocal lattice points can be represented on the angular coordinates. The in-plane strain ͑ ʈ ͒ and the strain in the surface-perpendicular direction ͑ Ќ ͒ used to directly determine the in-plane ͑a L ʈ ͒ and the perpendicular lattice constant ͑a L Ќ ͒ in the RSM are given by 39…”

Section: Resultsmentioning

confidence: 99%

New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

Koo

Byungsung

Yu³

et al. 2010

Journal of Applied Physics

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The new cubic Cd1−xMnxS/GaAs(100) epilayers were grown by hot-wall epitaxy, and their structural and optical properties were investigated by x-ray diffraction (XRD) and photoluminescence (PL). The cubic structure spectra of the Cd1−xMnxS epilayers were only observed in the Mn composition range of 0.000≤x≤0.050 from the XRD spectra and the x-ray ϕ-scan curves. The lattice constants of the Cd1−xMnxS epilayers decreased linearly with increasing Mn composition and were consistent with Vegard’s law. The Cd1−xMnxS epilayers from x-ray reciprocal space mapping were found to be in a partially biaxial compressive strain state. In the cubic Cd1−xMnxS epilayers, only yellow emission PL peaks at around 2.0 eV without other peaks such as the appreciable near-edge emission peak and self-activated peak were observed.

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Section: Resultsmentioning

confidence: 99%

New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

Koo

Byungsung

Yu³

et al. 2010

Journal of Applied Physics

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“…On the other hand, Akasaki et al 39 and Sugiura et al 40 reported that thermal annealing process partially crystallizes amorphorized buffers in AlN/Al 2 O 3 and GaN/Al 2 O 3 heteroepitaxy, respectively. Lee et al 41 reported that the annealing process is indispensible for dislocation annihilation by half-loop formation, even in the zinc blende system of ZnTe/GaAs. Therefore, it is expected that the LT homobuffer contains a large density of threading dislocations, and the thermal annealing terminates the threading dislocations by bending or looping them, which induces the smooth surface for subsequently grown ZnO films.…”

Section: Figures 4(a) -4(d)mentioning

confidence: 99%

Growth mechanism of ZnO low-temperature homoepitaxy

Park

Minegishi

Lee

et al. 2011

Journal of Applied Physics

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Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures Appl. Phys. Lett. 98, 031907 (2011); 10.1063/1.3544575Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecularbeam epitaxy J. Appl. Phys. 108, 093518 (2010); 10.1063/1.3498800High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layerThe authors report on the growth mechanism of ZnO homoepitaxy at the low-temperature range of 500 C, which is unavailable to obtain high-quality ZnO films in heteroepitaxy. One typical set of ZnO films were grown on (0001) ZnO substrates by molecular-beam epitaxy: a standard structure without buffer and two buffered structures with high-temperature (HT) homobuffer and low-temperature (LT) homobuffer. As a result, the LT homobuffered structure had the outstanding material properties: the surface roughness is 0.9 nm, the full width at half maximum of x-ray rocking curve is 13 arcsec, and the emission linewidth of donor-bound excitons is 2.4 meV. In terms of the theoretical interpretation of the experimentally obtained electron mobilities, it was found that the LT homobuffered structure suffers less from the dislocation scattering and the ionized-impurity scattering compared to the HT homobuffered structure. It is proposed that, in the ZnO low-temperature homoepitaxy, the LT homobuffer plays a key role in inducing the complete termination of dislocations in the homointerface and suppressing the outdiffusion of contaminants and point defects on the ZnO surface, which results in the formation of smooth wetting layer on the homointerface.

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“…3,4 Realization of the growth of high-quality GaSb on ZnTe virtual substrates should enable monolithic integration of InAs-and GaSb-based semiconductor devices, such as mid-wavelength infrared (IR) laser diodes and longwavelength IR photodetectors composed of InAs/InAsSb and InAs/(In)GaSb type-II superlattices, 5 on large low-cost GaAs or Si substrates. Although some preliminary studies of the growth of GaSb on ZnTe have been reported, 6,7 realization of high-quality crystalline materials of GaSb on ZnTe still remains challenging.…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

Fan

Ouyang

Liu

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ reflection-high-energy electron diffraction shows rapid and smooth transition from ZnTe surface reconstruction to GaSb surface reconstruction. Post-growth structural characterization using x-ray diffraction and transmission electron microscopy reveals smooth interface morphology and low defect density. Strong photoluminescence emission is observed up to 200 K. The sample grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min showed the narrowest bound exciton emission peak with a full width at half maximum of 15 meV.

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Molecular beam epitaxy of GaSb layers on GaAs (001) substrates by using three-step ZnTe buffer layers

Cited by 15 publications

References 9 publications

New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

Growth mechanism of ZnO low-temperature homoepitaxy

Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

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