High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in  N 2 O

Abstract

maintained by charge-discharge cycling. The a-V2Os-P205 had no diffraction patterns except due to PTFE and graphite.The IR spectra at various stages of c-V2Os and e-V2Os cycling are shown in Fig. 6. The IR spectra of a-V2Os-P2Os gave unclear absorption spectra due to V=O and V--O bonds and almost did not change upon discharge and charge cycling. In the case of c-V2Os [Fig. 6(a)~] the absorption due to V--O stretching disappeared when it was discharged to 2.0 V(B) and the absorption due to V--O double bond also disappeared when it was discharged to 1.0 V(D) (12). This did not reverse even after charging to 3.5 V(E). On the contrary, e-V20~ [Fig. 6(b)] kept its structure even after discharging to 1.0 V(D) and then charging to 3.5 V(E). This shows e-V2Os is more resistant to the structure expansion due to lithium intercalation-deintercalation than c-V205. As the structural change for e-V205 did not occur by Li intercalation-deintercalation, the next charging after discharging is possible without capacity loss, i.e., the structure for Li insertion is maintained. Longer cycle life for deep discharge depth may be possible. These x-ray and IR data explain the less disruption of the structure for e-V205 and a-V2Os-P205 compared to c-V205.

Comparison of the electrical characteristics of Si metal–insulator–semiconductor tunnel diodes with interfacial layer grown by rapid thermal oxidation of Si in O2 and in N2O

“…7 The average thickness of the oxide on the Si after oxidation was 2 nm. Silicon wafers received standard cleaning and etching processors before oxidation.…”

N depth profiles in thin SiO2 grown or processed in N2O: The role of atomic oxygen

“…There is considerable interest in the enhancement of the electrical performance of thin gate and tunnel silicon oxides by the incorporation of N. One of the most favorable approaches is complete or partial growth of the oxide in N 2 O. [1][2][3] Since the electrical improvements have been linked to the amount and location of N incorporated in the oxide, 4 it is important to understand the correlations between oxide growth conditions and the N location and concentration. It has been shown that oxides grown entirely in N 2 O by furnace and rapid thermal oxidation ͑RTO͒ have distinctly different N concentration depth profiles.…”

Oxide Grown on Polycrystal Silicon by Rapid Thermal Oxidation in N[sub 2]O

“…It is seen that the large electron trapping of the O 2 -grown polyoxide can be suppressed by the second-step N 2 O oxidation. 35,36 The centroid of trapped charges, Xt, and the trapped charges, as a function of injected charges, of the two-step oxidation polyoxide and the O 2 -grown polyoxide for the positive and negative constant current injections are shown in Fig. 13 and 14, respectively.…”