Oxide Grown on Polycrystal Silicon by Rapid Thermal Oxidation in N[sub 2]O

Abstract

In this paper, rapid thermal processing ͑RTP͒ N 2 O polyoxides were studied in terms of oxidation temperature and thickness with O 2 oxidation polyoxides as comparison. Atomic force microscopy, transmission electron microscopy, and secondary ion mass spectroscopy measurements were employed to correlate the electrical characteristics with the physical structures. Results showed that RTP N 2 O-grown polyoxides exhibited better characteristics on the leakage current, E bd , trappings and Q bd. It was found that it was the proper amount of nitrogen incorporated in the polyoxide improving the interface of the polyoxide/polysilicon, consequently improving the electrical quality. The initial hole-trapping phenomenon during the constant current stress, which was due to the incorporated nitrogen, was also observed in the N 2 O-grown polyoxides. The two-step RTP process, i.e., first RTP oxidizing the polysilicon in O 2 and then RTP oxidizing in N 2 O, could achieve polyoxide of good characteristics by incorporating the proper amount of nitrogen into the polyoxide.

The Investigation of the High-k Gd[sub 2]O[sub 3] (Gadolinium Oxide) Interdielectrics Deposited on the Polycrystalline Silicon

“…To obtain good data retention characteristics for nonvolatile memory, the inter-polysilicon oxides ͑polyoxides͒ required with low conductivity, high breakdown fields, and high charge to breakdown have long been sought. [1][2][3] However, polyoxides grown on polysilicon have a higher leakage current and a lower dielectric strength than oxides of comparable thickness grown on single crystal silicon because of asperities at the polyoxide/polysilicon interface and the nonuniformities.…”

Ta2O5 Polycrystalline Silicon Capacitors with CF4 Plasma Treatment

“…To mitigate these deficiencies, different treatments, such as post annealing and plasma treatments, have been investigated. [4][5][6] In this research, the electrical and physical characteristics of Ta 2 O 5 on polycrystalline silicon capacitors with CF 4 plasma treatment and annealing have been studied. Since an appropriate amount of fluorine added can bond fluorine atoms to dangling bonds and displace extra oxygen atoms near the high-k/Si interface, the incorporation of CF 4 plasma treatment can cause the high-k Ta 2 O 5 gate dielectrics to have better electrical performance and material properties.…”

Performance and reliability improvements in thin-film transistors with rapid thermal N2O annealing

“…These include thinstacked nitride films (ONO) [16] and NH 3 -annealing for gate dielectrics [17]. The incorporation of nitrogen into the gate dielectrics of MOS devices by different processes has been widely shown to improve the reliability of transistor devices [18][19][20][21]. This improved reliability is mainly due to the fact that most of the incorporated nitrogen can pile up at the SiO 2 /Si interface to form an oxynitride layer which improves hotcarrier immunity.…”