High quality single and double two-dimensional electron gases grown by metalorganic vapor phase epitaxy

Abstract

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2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

“…In our previous work with arsine, we demonstrated 2DEGs with mobilities up to ϭ7.9ϫ10 5 cm 2 /V s for a low electron density of nϭ3.0ϫ10 11 cm Ϫ2 at 0.3 K. 11 These 2DEGs had the highest mobility figure of merit /n 3/2 to date 13,14 and exhibited the fractional quantum Hall effect ͑FQHE͒ 18 for the first time in MOCVD material. In this letter, we have further optimized the mobilities of 2DEGs grown with arsine by varying the V/III ratio and spacer thickness.…”

“…As compared to molecular beam epitaxy ͑MBE͒, MOCVD has advantages including high quality regrowth, ability to rapidly and continuously vary alloy compositions, and low defect densities. We then present results on 2DEGs grown using TBA that exhibit mobilities up to 2.0ϫ10 6 cm 2 /V s. These are the highest mobilities to date for MOCVD materials [8][9][10][11][12] and approach state-of-the-art MBE mobilities. However, there are two primary disadvantages of MOCVD: lower material purity compared to MBE, and safety concerns due to highly toxic arsine gas.…”

“…11 For bulk GaAs layers grown with arsine, we obtained mobilities of 160 000 cm 2 /V s at 77 K, comparable to the best to date at 77 K. For 2DEG studies, the basic epitaxial structure consisted of 1 m undoped GaAs, an undoped Al 0.28 Ga 0.72 As spacer of varying thickness, a ϳ4ϫ10 12 cm Ϫ2 Si delta-doping layer, 625 Å undoped Al 0.28 Ga 0.72 As, and a 50 Å GaAs cap. 11 For bulk GaAs layers grown with arsine, we obtained mobilities of 160 000 cm 2 /V s at 77 K, comparable to the best to date at 77 K. For 2DEG studies, the basic epitaxial structure consisted of 1 m undoped GaAs, an undoped Al 0.28 Ga 0.72 As spacer of varying thickness, a ϳ4ϫ10 12 cm Ϫ2 Si delta-doping layer, 625 Å undoped Al 0.28 Ga 0.72 As, and a 50 Å GaAs cap.…”

“…The dark and light mobilities at 0.3 K for these samples are plotted in Fig. [8][9][10][11] This sample had dark mobilities ͑carrier concentrations͒ at 300, 77, and 0.3 K of 6500 (4.1ϫ10 11 ), 1.8ϫ10 5 (2.8ϫ10 11 ͒, and 1.2ϫ10 6 cm 2 /V s (2.3ϫ10 11 cm Ϫ2 ), respectively. The mobility of the TBA samples depend in the same manner on spacer thickness as the arsine samples.…”

Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures

“…Details of the growth conditions have been given elsewhere [11]. A 1000Å GaAs buffer layer is first grown, followed by a 1 µm thick Al 0.72 Ga 0.28 As stop etch layer.…”