2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

Abstract

Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures Growth of very low deep impurity density (N t 11 cm−3) In x Ga1−x P on GaAs by metalorganic chemical vapor deposition J.

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

“…Different approaches have been proposed in the literature to monitor impurity incorporation during MOVPE growth with the aim of improving the reactor overall performances. Typical examples include growing thick GaAs [8] or AlGaAs layers [9,10] and a subsequent analysis of the intensity of their optical properties. Previous works focused on the emission properties of low temperature near band edge, where donors and acceptors features can often be recognized.…”

“…Previous works focused on the emission properties of low temperature near band edge, where donors and acceptors features can often be recognized. GaAs/AlGaAs QW or 2D electron gas systems, acting as active layers in most devices and/or physical structures, were also presented as efficient tool to monitor the impact of impurity incorporation on the device performances [10,11,12]. No reference in the literature of what should be the best route towards material optimization can though be found, also because different applications might involve "differently" optimized material.…”

“…Typical examples include growing thick GaAs [8] or AlGaAs layers [9,10] and a subsequent analysis of the intensity of their optical properties. Previous works focused on the emission properties of low temperature near band edge, where donors and acceptors features can often be recognized.…”

Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films

“…The high purity of this reactor and precursors can be attested to by the quality of the two-dimensional electron gas samples grown in the reactor with record mobilities up to 2.0 • 106 cm2/V-s. 16 of 60 Tort, total reactor flow of 24 slm for A1GaAs and 31 slm for InGaAs and delta doped samples, and a substrate rotation speed of 1000 rpm. The substrate temperature was calibrated with a pyrometer.…”