Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films

Abstract

We have performed an extensive study of GaAs, Al022Gao 7sAs, and Ino 16Ga0 s4As grown using tertiarybutylarsine (TBA) in an ultra-high purity metalorganic chemical vapor deposition multi-wafer reactor. Key results include: high purity TBA A1GaAs layers with the lowest p-type carrier concentrations (4 • 1014 cm -3) reported to date; 4K photoluminescence bound exciton linewidths as narrow as 4.3 meV; C, O. Si, and S concentrations below the secondary ion mass spectrometry detection limit; and InGaAs/GaAs quantum wells with 20K PL linewidths as narrow as 3.5 meV. We also observe a strong dependence of growth rates and doping efficiency on group-V partial pressure, possibly due to a competition between excess group-V species and group-III or Si species for group-III surface sites. Finally, we demonstrate record uniformity using TBA with an A1GaAs thickness variation of only +1.4% across a 4 inch wafer.