High-quality InP grown by chemical beam epitaxy

Rothfritz, H.; Tränkle, G.; Müller, R.; Weimann, G.

doi:10.1016/0022-0248(92)90376-t

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…5. This is consistent with material attributed to a reduction of oxygen in the barrier grown under optimum conditions [3] as non-opti-and improved interface abruptness. This decrease mum conditions yield samples with broad, asym-in scattering centers yields a reduction in leakage metric X-ray characteristics, current and valley current.…”

Section: Introductionsupporting

confidence: 87%

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Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

Munns

Chen

Sherwin

et al. 1994

Journal of Crystal Growth

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It has generally been recognized that sources of the highest purity facilitate growth of loP and InAlAs with excellent optical and electrical characteristics. The mobility, photoluminescence linewidths, X-ray linewidths, impurity levels, and ultimately device results have been evaluated for two different hydride purity levels. It was found that each of the above characteristics was affected by improved arsine and phosphine purity. The 77 K mobility of lnP increased by a factor of 2 and the InAlAs silicon doping efficiency increased by a factor of 5. Accompanying improvement in device performance, notably the peak to valley ratio of resonant tunneling structures has been observed.

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Section: Introductionsupporting

confidence: 87%

“…The material liquid nitrogen Hall mobilities. As has been pregrown with filtering shows an activation energy of viously reported [3,4] there is a trade off between 3.9 eV in marked contrast to an activation energy good surface morphology and Hall mobilities in of 5.2 eV for unfiltered hydride. This is consistent InP.…”

Section: Introductionmentioning

confidence: 89%

Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

Munns

Chen

Sherwin

et al. 1994

Journal of Crystal Growth

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Using Gaseous Sources in Molecular Beam Epitaxy

1996

Devices Based on Low-Dimensional Semiconductor Structures

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Chemical beam epitaxial growth of inp using EDMIn and BPE

Kim

Sadwick

Stringfellow

1997

J. Electron. Mater.

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The effect of the growth temperature on the quality of InP grown by chemical beam epitaxy (CBE) using ethyldimethylindium (EDMIn) and bisphosphinoethane (BPE) are presented. The growth rate was nearly independent of growth temperature, BPE flow rate, and cracker cell temperature in the range from 700 to 900~ Smooth and mirror-like surfaces were obtained for all of the samples grown at temperatures above 465~ All of the InP samples were n-type. As the growth temperature increased, the net carrier concentration decreased and reached a minimum value of 3.2 • 10 ~ cm -3 at 485~ The electron mobility increased with increasing growth temperature, reaching values of 3630 and 21800 cm2/Vs at 300 and 77K, respectively. The photoluminescence was found to depend strongly on the growth temperature. Excitonic luminescence was detected only for growth temperatures above 465~ The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465~ At 485~ the band-edge recombination is dominant and the acceptor related emission is barely observable. As the growth temperature increased from 465 to 485~ the full width at half maximum of the bound exciton peak decreased from 6.8 to 3.5 meV at 14K. This trend was consistent with the decrease in the impurity concentration deduced from the Hall effect measurements.

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High-quality InP grown by chemical beam epitaxy

Cited by 11 publications

References 9 publications

Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

Using Gaseous Sources in Molecular Beam Epitaxy

Chemical beam epitaxial growth of inp using EDMIn and BPE

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