Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

Abstract

It has generally been recognized that sources of the highest purity facilitate growth of loP and InAlAs with excellent optical and electrical characteristics. The mobility, photoluminescence linewidths, X-ray linewidths, impurity levels, and ultimately device results have been evaluated for two different hydride purity levels. It was found that each of the above characteristics was affected by improved arsine and phosphine purity. The 77 K mobility of lnP increased by a factor of 2 and the InAlAs silicon doping efficiency increased by a factor of 5. Accompanying improvement in device performance, notably the peak to valley ratio of resonant tunneling structures has been observed.

Factors influencing the purity of electronic grade phosphine delivered to MOCVD tools

“…Results in Ref. [5], showing the effect of H 2 O impurity in PH 3 on mobility of InP, support our inferences in this regard.…”

“…Munns and coworkers reported a significant influence of hydride gas purity on InP. Increased mobility (77 K) was observed as H 2 O was decreased from 2 mmol mol À 1 (ppm) to 100 nmol mol À 1 (ppb) level in the PH 3 source [5], but the mechanism for this is unclear. In molecular beam epitaxial growth of InP, oxygen can be bound to Be acceptors and to a lesser extent to Si donors [6,7].…”