High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O

“…An optimal process window had been previously identified at a total pressure of 5 Torr, total flow rate of 360 sccm, 750-850°C, and SiH 4 /N 2 O ratio of 0.5%-2%. 9,10 The SiH 4 source was 10% diluted in Ar.…”