Growth, dielectric properties, and memory device applications of ZrO2 thin films

Panda, Debashis; Tseng, Tseung‐Yuen

doi:10.1016/j.tsf.2013.01.004

Cited by 250 publications

(141 citation statements)

References 150 publications

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“…Here I cc controls the amount of positively charged oxygen vacancies, which are produced for migration from the bottom cathode toward the top anode. 2,3,20 For the RRAM based on binary oxides sandwiched by the inert electrodes, the reversible switching is mainly attributed to oxygen vacancies or oxygen ions. It's well established that transport mechanism of TiO 2-x based bipolar RRAM can be well modeled with tunneling barrier or other non-linear transport barrier.…”

Section: Resultsmentioning

confidence: 99%

“…20,21 The electronic conduction of such devices can be modulated by inducing the motion of ionized defects, such as oxygen vacancies, by applying an appropriate voltage across the device. 2,3,22 Using defect chemistry the filament formation mechanisms of titanium oxides can be explained. TiO 2-x is a type of hypostoichiometric transition metal oxides (TMOs).…”

Section: Resultsmentioning

confidence: 99%

“…Among the several emerging memory, resistive random access memory (RRAM) based on the resistive switching (RS) effect taking place in metal-insulator-metal (MIM) cells, has attracted renowned interests as a promising next generation nonvolatile memory owing to its simple constituents, high speed operation, nondestructive readout, low operation voltage, long retention time, and high scalability. [1][2][3][4][5][6][7] Binary transition metal oxides, such as SiO 2 , HfO 2 , TiO 2 , NiO, ZnO, Ta 2 O 5 , etc., [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] has been intensively investigated as an active layers in RRAM application, for their big advantage, like crystal structure and stoichiometry are more easily controlled than perovskite oxides that consist of more than three components. Two-terminal RRAM structure allow its integration in crossbar arrays, by accessing each memory cell through the selection of a word-line and a bit-line.…”

Section: Introductionmentioning

confidence: 99%

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Temperature induced complementary switching in titanium oxide resistive random access memory

2016

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On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Temperature induced complementary switching in titanium oxide resistive random access memory

2016

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“…The metal oxide nanoparticles have attracted special attention to design nano structures for a variety of applications because of their enhanced physical and chemical properties [1]. The oxide nanoparticles are used to design energy efficient lithium ion batteries [2,3], light emitting diodes [4,5], solar cells [6,7], fuel cells [8,9] and transistors [10,11], hydrogen storage devices [12,13], air purification [14], water purification [15], gas sensing [16], temperature and humidity sensing studies [17], drug delivery and bio imaging studies [18,19].…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal Synthesis, Characterization and Dielectric Properties of Zirconia Nanoparticles

Ahmad¹,

Shahazad

Phul

2017

MSEIJ

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Simple hydrothermal method has been used to synthesize zirconia (ZrO 2 ) nanoparticles in alkaline medium. The powder X-ray diffraction technique (PXRD), electron microscopic studies (SEM and TEM) and BET surface area studies were done to characterize the as-synthesized nanoparticles. The crystalline nature and phase analysis of the ZrO 2 nanoparticles was determined by X-ray diffraction studies which revealed that the as-synthesized powder is pure monoclinic zirconia (m-ZrO 2 ). The particle size was estimated by TEM and HRTEM studies, which comes out to be about 25nm. The surface area of as-prepared ZrO 2 nanoparticles was found to be 186m 2 /g with DA pore radius of 11.9Å by using BET surface area studies. The dielectric constant and dielectric loss of the nanoparticles were found to be 7.5 and 0.0094 for as-synthesized nanoparticles at 500 kHz frequency at room temperature.

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“…[9][10][11][12][13][14] Among these, zirconium oxide appears to be one of the most promising candidates because of its high thermodynamic stability, large bandgap, high dielectric constant and compatibility with the CMOS process. 15,16 Recently, zirconium-oxide based RRAM has emerged as a superior resistive switching layer, 17,18 and several methods have been proposed to improve its performance in bipolar or unipolar operations. Using a Mo inserting layer, 19 and an Au nanocrystal (NC) embedded 20 in the ZrO 2 films, can improve the RRAM performance in bipolar resistance switching (BRS).…”

Section: Introductionmentioning

confidence: 99%

Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx structure

Lin

2016

AIP Advances

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This study investigates the performance of unipolar-switched ZrO2 RRAM, using an oxygen-deficient and amorphous ZrOx capping in a sandwich stack Al/ZrOx/ZrO2/ZrOx/Al structure. Superior high and low resistance switching and a resistance ratio (HRS/LRS) greater than 10 showed excellent dc endurance of 7378 switching cycles and 3.8 × 104 cycles in pulse switching measurements. Recovery behavior, observed in the I-V curve for the SET process (or HRS), led to HRS fluctuations and instability. A new resistance switching model for the stacked ZrO2 RRAM is proposed in this paper. In this model, oxygen-deficient and amorphous ZrOx film, capped on polycrystalline ZrO2 film, plays a key role and acts as an oxygen reservoir in making the oxygen ions redox easily for the SET process and in facilitating re-oxidation for the RESET process, resulting in excellent endurance. By improving the stability and recovery phenomena, engineering parameters of the current control may play a critical role during switching, and they can be correlated to the film’s thickness and the oxygen content of the amorphous ZrOx film.

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Growth, dielectric properties, and memory device applications of ZrO2 thin films

Cited by 250 publications

References 150 publications

Temperature induced complementary switching in titanium oxide resistive random access memory

Temperature induced complementary switching in titanium oxide resistive random access memory

Hydrothermal Synthesis, Characterization and Dielectric Properties of Zirconia Nanoparticles

Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx structure

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