Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique

Sinha, Sarita; Dutta, Gourab; Mannam, Ramanjaneyulu; DasGupta, Nandita; Rao, M. S. Ramachandra

doi:10.1016/j.apsusc.2020.145496

Cited by 3 publications

(1 citation statement)

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“…To obtain high-quality ITZO thin films, there are two sets of parameters in the fabrication: sputtering process and postdeposition process. Post-deposition treatments include postannealing [13][14][15], ionizing radiation [16], laser radiation plasma treatment [17], and ultraviolet radiation [18] etc. Among them, post-annealing treatment is a simple and effective method to improve the quality of thin films and devices.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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In this work, the electrical conductivity and optical transparency of the In-Sn-Zn-O (ITZO) films annealed at different temperatures were investigated. The results show that the ITZO films transformed from amorphous phase to crystalline phase after annealed in the air. The transmittance of the films improves significantly and all exceed 88%. Meanwhile, the annealed ITZO films exhibit a significant enhancement in conductivity. In particular, ITZO film annealed at 650 °C has high electrical conductivity (∼4.94×10 2 S cm −1 ) and an excellent figure of merit (∼5.94×10 −4 Ω −1 ). Moreover, ITZO thin film transistors were prepared and their performance was tested. After annealing, the high electrical properties of the active layer make the gate regulation ability of the thin film transistors degrade. The annealed films with excellent optoelectronic properties can be applied to transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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Nanostructured t-YSZ/Fe3O4 powdered composite obtained via AACVD method as a promising reinforcing material for metal matrices

Contreras-Vargas¹,

Sáenz-Trevizo²,

Carreño-Gallardo³

et al. 2022

Physica B: Condensed Matter

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Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics

Gao,

Shao,

Xin

et al. 2024

Micromachines

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Improvements in phase stability and dielectric characteristics can broaden the applications of zirconia in ceramics. Herein, a series of Y2O3-stabilized zirconia (YSZ) ceramics are synthesized using solid-state sintering, followed by an investigation into their phase evolution, grain size, dielectric constant, and breaking field. As the Y2O3 content increases from 0 wt% to 4 wt%, the as-grown YSZ ceramics undergo a distinct phase transformation, transitioning from monoclinic to monoclinic + tetragonal and further to monoclinic + tetragonal + cubic, before finally returning to monoclinic + cubic. Significant changes occur in the internal microstructure and grain size of the ceramics as the phase composition alters, resulting in a reduction in grain size from 3.17 μm to 0.27 μm. Moreover, their dielectric constants exhibit an increasing trend as the Y2O3 content increases, rising from 3.92 to 13.2. Importantly, the dielectric breakdown field of these YSZ ceramics shows a similar variation to the phase evolution, ranging from 0.11 to 0.15 MV/cm. This study sheds light on the phase evolution and dielectric properties of YSZ ceramics, offering an efficient strategy for enhancing their dielectric performances.

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Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique

Cited by 3 publications

References 40 publications

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Nanostructured t-YSZ/Fe3O4 powdered composite obtained via AACVD method as a promising reinforcing material for metal matrices

Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics

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