High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer

Balakrishnan, Ganesh; Huang, Shenghong; Khoshakhlagh, Arezou; Dawson, L. R.; Xin, Y.-C.; Conlin, Patrick; Huffaker, D.L.

doi:10.1116/1.1924424

Cited by 13 publications

(6 citation statements)

References 12 publications

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“…The coalescence of islands may lead to non-uniform relaxation and induce additional defects. Nevertheless, for some material systems an initial noticeable island-like III/V nucleation was successfully applied [72][73][74]. Inter-diffusion of the group IV and III/V atoms on the short [75] as well as on the long range has a strong impact on the layer properties and can lead to unintentional doping.…”

Section: Si Surface Preparation and Iii/v Nucleationmentioning

confidence: 99%

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

Kunert

Mols

Baryshniskova

et al. 2018

Semicond. Sci. Technol.

128

118

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The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude of new device applications and functionalities which would benefit from both the excellent optoelectronic properties of III/V compound materials and the well-established and highly mature Si manufacturing technologies. Due to the lattice mismatch between most III/V compound semiconductors and Si substrates, monolithic growth inevitably leads to the formation of strain releasing defects which degrade the final device performance and reliability. This review paper provides an overview of current approaches and methods to control the defect formation in monolithic III/V hetero-epitaxy on (001) Si substrates. The focus is on understanding the mechanisms of defect nucleation, manipulation and confinement in order to eventually realize active III/V device layers on Si substrates with high crystalline quality. For details about device applications numerous references are listed. Although many different integration approaches are discussed in the literature, there are two main concepts for the hetero-epitaxial growth of III/V material on Si: growth on blanket Si wafers and selective area growth on patterned Si substrates. Both methods have their advantages and disadvantages with respect to defect control and could potentially enable the integration of different III/V devices on a Si platform.

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Section: Si Surface Preparation and Iii/v Nucleationmentioning

confidence: 99%

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

Kunert

Mols

Baryshniskova

et al. 2018

Semicond. Sci. Technol.

128

118

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“…The RHEED and AFM analysis of the early stages of AlSb growth on Si indicate that AlSb epilayers also form islands on Si or GaAs substrates, [7][8][9][10][11] which are denser and coalesce at significantly lower thicknesses as compared to GaSb. 12 It has also been observed that introducing a thin buffer layer of AlSb can significantly improve the quality of GaSb films by accelerating the plateau-like growth of GaSb among AlSb islands.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

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The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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“…III/Sb tends to nucleate easily as three-dimensional islands on a Si surface [20,50,51], even at low growth temperatures. A further reduction in growth temperature to improve the wetting behavior leads to a diminishing growth rate, whereas a higher material flux into the chamber can cause selectivity issues on the oxide pattern [38].…”

Section: Defect Density In Gasb Nano-ridgesmentioning

confidence: 99%

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Baryshnikova

Mols

Ishii³

et al. 2020

Crystals

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Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

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High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer

Cited by 13 publications

References 12 publications

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

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