Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Abstract

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

“…In addition, we have observed that the PD formation is also strongly correlated with the trench formation and pre-epi cleaning processes. Hence, both the seed deposition parameters as well as the template fabrication must be further optimized to reduce the MT density to below 0.2 μm −1 –0.5 μm −1 [ 22 ]. It is important to note that a PD reaching the side and top surfaces of the NR is not accompanied by partial dislocations and, hence, should not significantly impact the device performance.…”

Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

“…Our simulation results show that band tailing due to defect in the source/channel interface is thus of importance on subthreshold performance in the proposed structure. Defects in the GaInAs/GaInSb interface can be of the donor or acceptor type, and their density may vary between 10 5 -10 7 cm -2 [34,35]. In this section, to investigate the effect of defect in the source/channel interface on the performance of Ga 0.8In 0.2As/Ga0.85In0.15Sb VHJLTFT, the donor type defect density is 10 6 cm -2 and the acceptor type defect density is10 7 cm -2 .…”

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

“…More recently, Kunert et al [62] used a SAE approach to achieve some GaAs and GaSb nano-ridges (NRs) which come out from the cavities with tunable shapes and facets as function of the process conditions (Figure 21a.). These type of NRs can serve as laser diodes structure as well as planar photodetectors.…”