High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

Sin, Y. K.; Horikawa, H.; Matsuyama, I.; Kamijoh, T.

doi:10.1049/el:19920506

Cited by 8 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Subramanian et al (85) have demonstrated the utility of GaAs : As for isolation between tandem solar cells. There have also been many demonstrations of the applications of GaAs : As as a current-block ing layer in diode lasers (86)(87)(88).…”

Section: Device Applicationsmentioning

confidence: 99%

Low-Temperature Grown III-V Materials

Melloch¹,

Woodall²,

Harmon³

et al. 1995

Annu. Rev. Mater. Sci.

125

View full text Add to dashboard Cite

MEL LOCH ET AL quality single crystals. These materials are arsenides such as GaAs, AIGaAs, and InGaAs containing arsenic clusters. The composites are formed by incorporating excess arsenic in the semiconductor, which per cipitates in the anneal. The incorporation of the excess arsenic is accomplished by molecular beam epitaxy at low substrate temperatures. The cluster density can be controlled with the coarsening annealing. The positioning of the clusters can be controlled with heterojunctions and doping. These composites exhibit several interesting properties, including high-resistivity, appreciable optical absorption below the band gap of the semiconductor matrix material, a large electro-optic effect, and very short carrier lifetimes.

show abstract

Section: Device Applicationsmentioning

confidence: 99%

Low-Temperature Grown III-V Materials

Melloch¹,

Woodall²,

Harmon³

et al. 1995

Annu. Rev. Mater. Sci.

125

View full text Add to dashboard Cite

show abstract

A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

Maracas

Shiralagi

Ramamurti³

et al. 1993

J. Electron. Mater.

View full text Add to dashboard Cite

InGaAs/AlGaAs strained quantum well laser with semi-insulating low temperature GaAs and lateral n-p-n current confinement structures grown by molecular beam epitaxy

Takamori

Sin

Watanabe

et al. 1992

Applied Physics Letters

View full text Add to dashboard Cite

A combination of a lateral n-p-n junction using an amphoteric doping of Si in GaAs and a semi-insulating GaAs grown at low temperature is applied for the first time to a novel current confinement structure for an index-guided InGaAs strained quantum well laser grown by two-step molecular beam epitaxy. A threshold current of 7.4 mA and total external differential quantum efficiency of 59% under room temperature continuous wave operation are achieved with devices fabricated by a self-aligned process.

show abstract

High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

Cited by 8 publications

References 2 publications

Low-Temperature Grown III-V Materials

Low-Temperature Grown III-V Materials

A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

InGaAs/AlGaAs strained quantum well laser with semi-insulating low temperature GaAs and lateral n-p-n current confinement structures grown by molecular beam epitaxy

Contact Info

Product

Resources

About