InGaAs/AlGaAs strained quantum well laser with semi-insulating low temperature GaAs and lateral <i>n-p-n</i> current confinement structures grown by molecular beam epitaxy

Takamori, Takeshi; Sin, Y. K.; Watanabe, Kenji; Kamijoh, T.

doi:10.1063/1.108260

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Cited by 13 publications

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“…Subramanian et al (85) have demonstrated the utility of GaAs : As for isolation between tandem solar cells. There have also been many demonstrations of the applications of GaAs : As as a current-block ing layer in diode lasers (86)(87)(88).…”

Section: Device Applicationsmentioning

confidence: 99%

Low-Temperature Grown III-V Materials

Melloch¹,

Woodall²,

Harmon³

et al. 1995

Annu. Rev. Mater. Sci.

125

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MEL LOCH ET AL quality single crystals. These materials are arsenides such as GaAs, AIGaAs, and InGaAs containing arsenic clusters. The composites are formed by incorporating excess arsenic in the semiconductor, which per cipitates in the anneal. The incorporation of the excess arsenic is accomplished by molecular beam epitaxy at low substrate temperatures. The cluster density can be controlled with the coarsening annealing. The positioning of the clusters can be controlled with heterojunctions and doping. These composites exhibit several interesting properties, including high-resistivity, appreciable optical absorption below the band gap of the semiconductor matrix material, a large electro-optic effect, and very short carrier lifetimes.

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