Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates

Takamori, Takeshi; Kamijoh, T.

doi:10.1016/0022-0248(95)80239-9

Cited by 5 publications

(5 citation statements)

References 12 publications

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“…A detailed analysis of growth behaviour is in preparation [7], but here we wish to mention two effects which may have significant consequences for dopant incorporation and hence electrical behaviour. Firstly, doping-contrast SEM investigations and spatially resolved cathodoluminescence measurements suggest that the junction positions have moved away from the facet intersections on to the adjacent (110) surfaces; similar behaviour has been reported for other patterned substrate combinations [3,8]. Secondly, the relative thicknesses of the epitaxial material on the two planes indicate a largescale Ga adatom migration onto the (100) facet, presumably generating large numbers of Ga vacancies on the p-type side of the junctions.…”

Section: Growth Behavioursupporting

confidence: 64%

“…Molecular beam epitaxial (MBE) growth of Si-doped GaAs over a patterned GaAs substrate enables the formation of lateral p-n junctions, by utilizing the surfacedependent amphoteric doping behaviour of silicon in III-V semiconductors [1,2]. Studies undertaken to date have used (100) substrate/(N11)A facet [1,3] and (111)A substrate/(311)A facet [2,4] combinations, creating the lateral p-n junctions at the facet-flat boundaries. In this study, (110)-orientated semi-insulating GaAs substrates were etched by an anisotropic chemical etchant through a mask, creating a series of ridge mesas.…”

Section: Introductionmentioning

confidence: 99%

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Electrical properties of lateral p - n junctions formed on patterned (110) GaAs substrates

Gardner

Woods

Domínguez

et al. 1997

Semicond. Sci. Technol.

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We have successfully demonstrated the formation of lateral p-n junctions via single-step Si-doped GaAs MBE growth over patterned (110) GaAs substrates. Current-voltage measurements indicate that the quality of the p-n junctions is position dependent; those located at the lower facet-flat boundary displayed superior rectification properties compared with the upper facet-flat junctions. Analysis of the lower junction forward characteristics revealed two types of current transport, each dominant over separate voltage ranges. Under low applied voltage, electron tunnelling via mid-gap states is proposed as the main mechanism, while diffusion and generation-recombination currents appear to dominate the device characteristics at higher voltages. In contrast, only tunnelling conduction was seen in the forward characteristics of the upper junctions. These effects are interpreted as due to compensated incorporation of Si in the region of the junctions, resulting from strong Ga diffusion from the (110) plane to the (100) surface. Series resistance values for the upper and lower junctions are consistent with this model, as are the dependences on growth temperature.

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Section: Growth Behavioursupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Electrical properties of lateral p - n junctions formed on patterned (110) GaAs substrates

Gardner

Woods

Domínguez

et al. 1997

Semicond. Sci. Technol.

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“…Examples include the formation of quantum wires ͑QWRs͒, 1,2 quantum dots, [3][4][5] and with enhanced spatial control, selective doping of adjacent planes forming lateral p-n junctions. [6][7][8][9] Fabrication of these structures requires accurate control of the growth sequence. [10][11][12][13] However, despite the interest in forming device structures, 14 -18 very few attempts have been made to investigate the details of the growth processes which influence the final morphology of the ridge structures.…”

Section: Introductionmentioning

confidence: 99%

Influence of the growth conditions on the ridge morphology during GaAs deposition on GaAs (001) patterned substrates

Williams

Ashwin

Jones

et al. 2004

Journal of Applied Physics

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Ridge structure transformation by group-III species modification during the growth of (Al,Ga)As on patterned substrates J. Appl. Phys. 97, 044905 (2005); 10.1063/1.1849433Planar InAs growth on GaAs(001) and subsequent quantum dot formation by a surface induced morphological instability J.The formation of ridge structures on ͗100͘ aligned mesa stripes defined on GaAs ͑001͒ substrates has been investigated as a function of the substrate temperature, V/III flux ratio, and GaAs deposition quantity. Across the entire range of deposition conditions employed, the ridge structures were observed to form with ͕110͖ facets, indicating a similar growth mechanism in all cases. The ͕110͖ facet lengths on the ridge structures were accurately reproduced using a simple one-dimensional geometric model that included the effects of Ga adatom migration from the ͕110͖ facets to the upper ridge surface and resulting in an additional Ga flux. The results have important implications for the controlled growth of micron-scale ridge structures on patterned substrates.

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“…These extra Ga atoms are expected to generate large numbers of As vacancies, promoting Si As and Si Ga -Si As pair formation and causing compensation of the n-type material. In a paper on lateral junctions formed on patterned (111)A substrates [36], the authors estimated that the electron concentration fell from mid 10 17 cm −3 on the uncompensated surfaces to mid 10 16 cm −3 on the (411)A compensated surface and we expect a similar reduction to occur on the (411)A surface in the (100) upper junctions. Also, Ga vacancies would be created on the p-type (311)A surface by the migration, encouraging Si Ga and Si Ga -Si As formation and compensating the material on the p side of the upper (100) junction.…”

Section: Silicon Incorporation In Gaasmentioning

confidence: 87%

“…Following the initial demonstration by Miller [1] of silicondoped GaAs lateral p-n junctions grown over patterned substrates, there has been widespread interest in the physics and applications of such devices [1][2][3][4][5][6][7]. Silicon acts as an amphoteric dopant in GaAs, doping the material p type if it occupies an As site or n type if it incorporates into a Ga site [8].…”

Section: Introductionmentioning

confidence: 99%

Relationship between silicon incorporation and electrical characteristics for lateral p - n junctions grown on patterned (110) and (100) GaAs substrates

Gardner

Domínguez

Harris

1997

Semicond. Sci. Technol.

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We have undertaken a systematic study of silicon incorporation on planar and patterned GaAs substrates. In this paper we link the observed electrical characteristics of lateral p-n junctions formed on patterned (100) and ( 110) substrates to silicon incorporation on the chosen surfaces and subsequent defect formation. Lateral p-n junctions were fabricated on patterned ( 100) and ( 110) substrates. These were located at the upper and lower boundaries between the (100)-(311)A and ( 110)-( 100) flat-facet combinations. Electrical measurements revealed two main current mechanisms, dominant over separate sections of the voltage characteristic. Under low bias, a tunnel current was observed in all samples and this was ascribed to indirect electron tunnelling into band-tail states, followed by recombination via phonon emission. The magnitude of the excess current in various junction combinations was observed to be related to the degree of compensation in the junction regions, determined by the growth conditions and Ga migration effects; the highest levels were measured in the most compensated material. Recombination and diffusion currents were dominant under high bias conditions. The value of the ideality factor was found to be dependent on the relative magnitudes of the majority carrier densities on either side of the depletion region.

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Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates

Cited by 5 publications

References 12 publications

Electrical properties of lateral p - n junctions formed on patterned (110) GaAs substrates

Electrical properties of lateral p - n junctions formed on patterned (110) GaAs substrates

Influence of the growth conditions on the ridge morphology during GaAs deposition on GaAs (001) patterned substrates

Relationship between silicon incorporation and electrical characteristics for lateral p - n junctions grown on patterned (110) and (100) GaAs substrates

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