Low-Temperature Grown III-V Materials

Abstract

MEL LOCH ET AL quality single crystals. These materials are arsenides such as GaAs, AIGaAs, and InGaAs containing arsenic clusters. The composites are formed by incorporating excess arsenic in the semiconductor, which per cipitates in the anneal. The incorporation of the excess arsenic is accomplished by molecular beam epitaxy at low substrate temperatures. The cluster density can be controlled with the coarsening annealing. The positioning of the clusters can be controlled with heterojunctions and doping. These composites exhibit several interesting properties, including high-resistivity, appreciable optical absorption below the band gap of the semiconductor matrix material, a large electro-optic effect, and very short carrier lifetimes.

Plasmon phenomena and luminescence amplification in nanocomposite structures

“…The model discussed describes the properties not only of metal-dielectric mixtures but also of such interesting object as low-temperature grown GaAs containing metallic As clusters in semiconducting matrix. 10 Optical absorption spectra in this material were discussed in Ref. 11 for small cluster concentration C while the present work shows their evolution at arbitrary C. Note that bulk As has the carrier concentration two orders of magnitude less than typical metals so that for the low-temperature grown GaAs p Ӎ 10 15 s −1 corresponds to the infrared spectral region.…”

Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process

“…3(a)). This is desirable for photoconductive switching applications, but the carrier lifetime increases as the annealing temperature increases [2], [5]. To circumvent the problem, we confirm the carrier lifetime by the pump-probe transient reflectance measurement.…”

“…As a result of the precipitation, the As antisite density decreases, suppressing the carrier hopping between the antisites [2]. The As precipitates exhibit metallic properties to generate the depletion region, leading to a high sheet resistance (>10 GΩ/sq) as T a increases (Fig.…”

“…layer that is grown by molecular beam epitaxy (MBE) at low temperatures, typically below 300°C [2], [3].…”

Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

“…1,2 After annealing it exhibits a high specific resistance 3 of up to 10 7 ⍀ cm, strongly enhanced dielectric breakdown fields 4 as large as 5ϫ10 5 V/cm and extremely short lifetimes of photoexcited carriers 5,6 ͑Ͻ1 ps͒. These properties make LT-GaAs very appealing as a material for a large number of applications 7,8 like fast photodetectors, optical switches, or electro-optic moldulator structures.…”