A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

Structural and electrical properties of low-temperature-grown Al(As,Sb)

“…1,2 Depending on the actual growth temperature, approximately 0.5%-2% excess arsenic is incorporated into a GaAs crystal. The resistivity of as-grown LTG-GaAs is on the order of 10 2 ⍀ cm, but upon annealing, LTG-GaAs turns semiinsulating, with resistivities up to 10 6 ⍀ cm, and arsenic precipitates may form.…”

He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials

“…been observed by others and attributed to the formation of phosphorus antisite defects, P In . 2,6,8 In contrast, growth with He plasma over the temperature interval 400-450°C results in very high resistivity material ͑up to 10 5 ⍀ cm with mobility 500-1000 cm 2 /V s͒. For temperatures decreasing below 400°C, the resistivity of the plasma grown material decreases rapidly, saturating at a value of about a factor of 10 greater than the no-plasma case and resulting in a carrier concentration of nϳ1ϫ10 18 cm Ϫ3 .…”

“…In the case of GaAs, the intrinsic defect EL2 is used in the production of semi-insulating substrates, while highly resistive epitaxial GaAs can be produced by the introduction of nonradiative defects associated with excess As in a procedure involving low-temperature growth and postgrowth annealing. 1,2 Low growth temperature methods have also been applied to InP, [2][3][4][5][6] and recently a combination of low growth temperature and Be doping has resulted in ultrafast photoresponse at 1.55 m wavelength in multiquantum well structures on InP. 7 In this letter, a plasma assisted epitaxial technique is presented and used to produce both high resistivity InP and optically fast, 1.55 m wavelength, InGaAsP quaternary lattice matched to InP.…”

Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy

“…This includes low background, nonintentional shallow dopant concentrations of less than 10 14 cm Ϫ3 , very high electronic mobilities, and high optical activity and excitonic behavior at low temperatures. 5 By controlling excess As incorporation during the growth of LT GaAs, a sample can vary in its conductive properties over a fairly wide range and thus can be engi-neered for different device applications. 2 LT GaAs layers are not as perfect as HT GaAs layers, but still have many important applications.…”