Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy

Halder, N. C.; Goodman, T.

doi:10.1116/1.590517

Cited by 6 publications

(3 citation statements)

References 21 publications

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“…The internal Schottky model was also applied to explain the bias voltage dependence of the activation energy, capture cross section, and electronphonon coupling parameter in DLTS results of LT-GaAs. 38 On the other hand, it was reported that the reason for the PPC occurrence in the delta-doped GaAs is due to the potential barriers by delta doping. From these results, it is considered that the arsenic precipitations in the present LT-GaAs layers induces the internal Schottky barriers and the resulting potential barriers induce the PPC phenomenon.…”

Section: Resultsmentioning

confidence: 99%

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Ga/AsH[sub 3]

Oyama

Matsumoto²,

Watanabe

et al. 2001

J. Electrochem. Soc.

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The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers. © 2001 The Electrochemical Society. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Ga/AsH[sub 3]

Oyama

Matsumoto²,

Watanabe

et al. 2001

J. Electrochem. Soc.

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“…We used an automated FEDLTS system (see Fig. 3.2) developed [21,25] in our laboratory. This is a computer controlled, versatile system capable of monitoring all the experimental parameters (sample temperature, pulsing bias, reverse bias, rate window, total pulse and transient time).…”

Section: The Present Fedlts Systemmentioning

confidence: 99%

Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide

Halder

2005

DDF

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In this article we present a complete overview of our investigation on deep trap states in molecular beam epitaxy (MBE)-grown Si-implanted, low temperature (LT)-GaAs and high-temperature (HT)-GaAs by field effect deep level transient spectroscopy (FEDLTS). The LT-GaAs and HT-GaAs samples were grown at 300 o C and 750 o C, respectively. FEDLTS studies were conducted on Schottky diodes fabricated on these samples using Au contacts in the temperature range 100−350 K. We have included the lambda-effect and lambda-delta effect in the determination of deep trap concentrations and capture cross sections. Our study indicates that the deep traps identified in LT-GaAs and HT-GaAs are all bulk deep traps (BDT). No near-surface-deep traps (NDT) were detected in either of these materials. Furthermore, the effective deep trap concentration, in both LT-GaAs and HT-GaAs, increased with temperature showing a two-step linear rise and ending with a tendency to saturate around 350 K. The ionization energy of the carriers indicated a linear relationship with temperature in the above temperature range from 0.05 eV to 0.30 eV for LT-GaAs and from 0.02 eV to 0.12 eV for HT-GaAs.

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“…The observation and analysis of this sequence of conducting behavior changes associated with semi-insulating GaAs consist in the main contribution of this work. Even though the different conduction regimes have been already investigated over the years for semi-insulating GaAs [5][6][7][8][9][10][11], in this work we were able to identify the three different conduction mechanisms in the range of 100-500 K using the DAE method for a set of annealed samples, allowing us to obtain a detailed picture of the effects of the annealing over the density of states. Namely, we have the pinning of the Fermi level, the NNH activation energy and the hopping parameter T 0 .…”

Section: Introductionmentioning

confidence: 99%

Conduction mechanisms on annealed semi-insulating GaAs samples

Peres¹,

Chaves²,

Rubinger³

et al. 2011

Semicond. Sci. Technol.

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We have measured electrical resistivity in the range of 100-500 K on six semi-insulating low-temperature grown molecular-beam epitaxy GaAs samples that were exposed to annealing treatment. Samples 2, 3, 4, 5 and 6 were annealed with temperatures of 350 • C, 400 • C, 450 • C, 500 • C and 550 • C, while sample 1 was not exposed to the annealing process. We used the differential activation energy method to precisely identify the temperature region where the different conduction regimes dominate, i.e. band conduction, nearest neighbor hopping and variable range hopping. We will also show that the change on the density of states in the impurity band caused by annealing significantly alters the conduction mechanisms present in those samples.

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Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy

Cited by 6 publications

References 21 publications

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Ga/AsH[sub 3]

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Ga/AsH[sub 3]

Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide

Conduction mechanisms on annealed semi-insulating GaAs samples

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