Structural and electrical properties of low-temperature-grown Al(As,Sb)

Abstract

We have investigated structural and electrical properties of Al(As,Sb) dual-anion compounds grown by molecular beam epitaxy at low substrate temperature. We find single-crystal growth down to substrate temperatures as low as 275 °C. Additional donor-type defects form when Al(As,Sb) is grown at 450 °C or less, with the defect density increasing with decreasing substrate temperature. We find no evidence for the formation of precipitates upon annealing low-temperature-grown (LTG) Al(As,Sb) in contrast to LTG arsenides.

First X-ray diffraction analysis of pressure polymerized C 60 single crystals

“…To some extent this is supported by the shorter a and longer c parameters of the present "low-pressure" phase [10] as compared to the "high-pressure" values reported previously [6], [7]. A reinvestigation of the low-pressure region of the P -T phase diagram of C 60 , already well characterized at high pressure [17], [18], would thus be very interesting. ***…”

High Pressure Synthesis, Structure, Physical and Mechanical Properties of C60 Fullerite Superhard and Ultrahard Phases.

“…This study confirms our earlier estimations [12] of the hardness of ultrahard fullerites 200-300 GPa. Ultrahard fullerite deforms plastically the hardest face (111) of diamond at room temperature.…”

“…The measurements of hardness of the fullerite samples have been a problem because it is comparable with the hardness of the diamond indenter and even exceeds it [7,[9][10][11][12]. We have used the criterion of plastic deformation of the tested specimen in the indentation point to show that the hardness of ultrahard fullerites is higher than that of diamond .…”