High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate

Okamoto, Yasuhiro; Ando, Yasuhisa; Nakayama, Tatsuo; Hataya, K.; Miyamoto, Hiroyuki; Inoue, Takashi; Senda, M.; Hirata, Koji; Kosaki, Masayoshi; Shibata, Naoki; Kuzuhara, Masaaki

doi:10.1109/ted.2004.838453

Cited by 60 publications

(40 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Field-plate structures have been applied to AlGaN/GaN HEMTs [23][24][25][26][27] to mitigate the concentration of electric field at the gate edge of the drain side, which is effective in reducing the current collapse. However, several reliability issues still remain in GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

show abstract

Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…For GaN field-effect transistors (FETs), in particular, it has been reported that the SiN x -based passivation scheme is effective in suppressing "current collapse effects" [1][2][3] due to a relatively low state density at the SiN x /AlGaN interface. [4][5][6] Very recently, Derluyn et al 7) have reported that the in situ deposition of SiN x on the AlGaN surface significantly improved the DC performance of AlGaN/GaN high-electron mobility transistors (HEMTs).…”

mentioning

confidence: 99%

Chemical and Potential Bending Characteristics of SiN_x/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

Ogawa

Hashizume

Nakazawa

et al. 2007

jjap

View full text Add to dashboard Cite

We investigate the chemical and potential-bending characteristics of in situ SiN x /AlGaN interfaces prepared by metal-organic chemical vapor deposition. X-ray photoelectron spectroscopy showed that the in situ SiN x layer had typical chemical binding energies corresponding to the Si-N bonds. The in situ SiN x deposition brought no chemical degradation on the AlGaN surface at the SiN x /AlGaN interface, whereas the ex situ deposition of SiN x by a plasma process induced chemical disorder on the AlGaN surface including a composition change and the formation of interfacial oxides. A significant reduction in the surface band bending was observed on the AlGaN surface after the in situ SiN x passivation, probably due to a decrease in the surface state density.

show abstract

“…Power amplifiers (PAs) [2], [3] for cellular base-stations and a few, small, integrated circuits [4]- [7] have already appeared in the literature. A GaN monolithic-microwave integrated circuit (MMIC) transceiver would have advantages over other material systems.…”

Section: Introductionmentioning

confidence: 99%

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Sanabria

Chakraborty

et al. 2006

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices.Index Terms-AlGaN, GaN, gate leakage, high electron mobility transistor (HEMT), noise figure, van der Ziel.

show abstract

High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate

Cited by 60 publications

References 8 publications

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Chemical and Potential Bending Characteristics of SiN_x/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Contact Info

Product

Resources

About

High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate

Cited by 60 publications

References 8 publications

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Contact Info

Product

Resources

About

Chemical and Potential Bending Characteristics of SiN_x/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition