Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Abstract

University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

“…The MMC device showed significantly less knee voltage V knee consistent with our previous reports. [18][19][20] Even though its effective gate width W total is just almost a third of that of the planar device, the MMC device exhibited almost the same levels of raw I D . At T A of 42 C, V GS ¼ 0 V, and V DS ¼ 15 V, the MMC and planar devices have raw I D of $25 mA and $27 mA, respectively.…”

“…18 Moreover, due to the resulting nano-channel high impedance, the MMC HEMT is less sensitive to changes in the access region; may they be due to trapping or changes in the physical dimension like gate-drain (G-D) spacing L GD , providing better current stability and breakdown voltage design flexibility compared with the planar HEMT. [18][19][20] Very recently, several groups have reported improved performance from nitride-based devices with very similar structure. Lee et al have demonstrated nanowire channel InAlN/GaN HEMTs with high linearity of both transconductance g m and cut-off frequency f t .…”

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

“…Compared with conventional planar GaN-based HEMTs, the fin-shaped GaN-based HEMTs exhibit low SS, high ON/OFF current ratio, small leakage current, and effectively suppressed short-channel effect due to the excellent gate control. 15,16 Moreover, in recent years, the fin-shaped GaN-based HEMTs only with the gate on the sidewalls (dual-gate structure) have shown excellent electrostatic isolation between the source and drain, a low knee voltage, a gradual transconductance profile near threshold, and nearly constant gain along the load line. 17 Compared with GaN-based trigate fin-shaped HEMTs, the absence of the top gate contact in GaN-based dual-gate fin-shaped HEMTs makes it more important for the gate on the sidewalls to control the channel.…”

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

“…anowire tri-gate architectures have recently attracted large attention for GaN HEMTs. Compared with conventional planar gates, the tri-gate offers additional electrostatic control from sidewall gates, which reduces IOFF and SS [1], [2]. Furthermore, the larger surface area of the tri-gate enhances heat dissipation of the device [3], [4].…”