Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

Ogawa, Eri; Hashizume, Tamotsu; Nakazawa, Shozo; Ueda, T.; Tanaka, Tsuyoshi

doi:10.1143/jjap.46.l590

Cited by 25 publications

(18 citation statements)

References 17 publications

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“…However, because of the large thermal mismatch to GaN, the thick-PECVD-SiN x passivation layer may crack after the RTA (>800°C) in a passivation-prior-to-ohmic process, which could be a preventive solution for the suppression of surface states in GaN HEMTs. Thin SiN x layer deposited by PECVD [2] or in-situ grown by metal-organic chemical vapor deposition (MOCVD) [7] on fresh AlGaN/GaN wafers could be an alternative method to suppress the formation of surface states, while its effectiveness may be limited by the film thickness.…”

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confidence: 99%

Robust SiN<italic>x</italic>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<italic>x</italic> Layer

Wang

Huang

Zheng

et al. 2015

IEEE Electron Device Lett.

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Low-pressure chemical vapor deposition (LPCVD) technique is utilized for SiN x passivation of AlGaN/GaN high-electron-mobility transistors (HEMTs). A robust SiN x / AlGaN interface featuring high thermal stability and well-ordered crystalline structure is achieved by a processing strategy of "passivation-prior-to-ohmic" in HEMTs fabrication. Effective suppression of surface-trap-induced current collapse and lateral interface leakage current are demonstrated in the LPCVD-SiN x passivated HEMTs, as compared with conventional plasma-enhanced chemical vapor deposition-SiN x passivated ones. Energy dispersive X-ray spectroscopy mapping analysis of SiN x /AlGaN interfaces suggests the interface traps are likely to stem from amorphous oxide/oxynitride interfacial layer. Index Terms-AlGaN/GaN high-electron-mobility transistors (HEMTs), current collapse, low-pressure chemical vapor deposition (LPCVD), oxidation, SiN x passivation.

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confidence: 99%

Robust SiN<italic>x</italic>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<italic>x</italic> Layer

Wang

Huang

Zheng

et al. 2015

IEEE Electron Device Lett.

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“…This is distinctly different from ex situ deposition of gate dielectrics during which exposure to air and/or plasma can induce chemical degradations including composition change, binding energy drift and formation of native oxides in the semiconductor. 10,24 Thus, the in situ grown SiN x layer can indeed effectively passivate the AlN surface from oxidation and damage, leading to a high quality in situ SiN x /AlN interface.…”

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confidence: 99%

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Lü

Jiang

et al. 2014

Applied Physics Letters

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We report the use of SiNx grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiNx/AlN interface exhibits remarkably low trap state densities in the range of 1011–1012 cm−2eV−1. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiNx layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiNx as an effective gate dielectric for AlN/GaN MIS devices.

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“…The lattice structure in the thin SiN implies that the SiN has a crystal structure with the abrupt interface [3]. X-ray Photoemission Spectroscopy (XPS) also reveals that no oxide is formed at the interface, which suggests that the in-situ SiN should be highly reliable and stable gate insulator [4]. Figure 2.…”

Section: Fabrication Of Algan/gan Mis-hfets Using In-situ Sin As mentioning

confidence: 99%

High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators

Kuroda

Murata

Nakazawa

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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AlGaN/GaN heterojunction transistors (HFETs)with metal-insulator-semiconductor (MIS)-type gate structure is promising for high frequency and high power applications owing to the superior material properties together with the reduced gate leakage current. In this paper, we present a novel AlGaN/GaN MIS-HFET using so-called in-situ SiN as a gate insulator. The in-situ SiN with a crystalline structure is formed subsequently after the epitaxial growth in the same reactor without any exposure in the air. The formation of the in-situ SiN greatly enhanced the sheet carrier concentration, which helps the reduction of the parasitic resistances. The fabricated MIS-HFET exhibits very high maximum oscillation frequency (f max ) of 203 GHz for the device with the gate length of 100 nm. The device exhibits the off-state breakdown voltages of 190 V at highest maintaining the high f max over 190 GHz, and is thus promising for high frequency and high power applications including future millimeter wave communication systems.Index Terms -AlGaN/GaN heterojunction FET, in situ SiN, metal-insulator-semiconductor type gate structure, sapphire

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Chemical and Potential Bending Characteristics of SiN_x/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

Cited by 25 publications

References 17 publications

Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer

Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators

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