High power laser pulses with voltage controlled durations of 400 – 1000 ps

Harth, Florian; Ulm, Thorsten; Lührmann, Markus; Knappe, R.; Klehr, A.; Hoffmann, Th.; Erbert, G.; L’huillier, Johannes A.

doi:10.1364/oe.20.007002

Cited by 16 publications

(5 citation statements)

References 11 publications

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“…For high repetition rate reports, an average output power of 25.5 W at 200 kHz was realized in 2008 by Coherent Inc. [32] . In 2012, a continuous-wave (CW) beam of a distributed feedback (DFB) diode laser modulated by an ultra-fast semiconductor modulator was injected into a regenerative amplifier based on a Nd:YVO crystal to produce 47.7 W at 816 kHz and 26.4 W at 99.8 kHz, with pulse durations adjustable from 400 ps to 1 ns [33] . However, this scheme suffered from amplitude fluctuations and CW background noise, which are disadvantageous for many applications.…”

Section: Introductionmentioning

confidence: 99%

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal

Guo

Wang

Lin

et al. 2019

High Pow Laser Sci Eng

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We report on a high-repetition-rate, high-power continuously pumped Nd:GdVO4 regenerative amplifier. Numerical simulations successfully pinpoint the optimum working point free of bifurcation instability with simultaneous efficient energy extraction. At a repetition rate of 100 kHz, a maximum output power of 23 W was obtained with a pulse duration of 27 ps, corresponding to a pulse energy of $230~\unicode[STIX]{x03BC}\text{J}$ . The system displayed an outstanding stability with a root mean square power noise as low as 0.3%. The geometry of the optical resonator and the pumping scheme enhanced output power in the $\text{TEM}_{00}$ mode with a single bulk crystal. Accordingly, nearly diffraction-limited beam quality was produced with $M^{2}\approx 1.2$ at full pump power.

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Section: Introductionmentioning

confidence: 99%

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal

Guo

Wang

Lin

et al. 2019

High Pow Laser Sci Eng

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“…With a monolithic integrated source consisting of an ultra-fast semiconductor modulator as optical gate and a tapered amplifier for pulse amplification, short optical pulses were selected and amplified [8]. By using a continuous wave (CW) operated DFB laser diode as master oscillator (MO) the modulator was capable of switching the optical beam within a few hundred picoseconds, generating pulses with pulse durations of 400 -1000 ps and an energy of 650 pJ [9]. A MOPA system consisting of a DFB laser as MO and a tapered amplifier for the generation of ns-pulses with high peak power, stabilized wavelength and narrow spectral line width at 1064 nm was presented in [10].…”

Section: Introductionmentioning

confidence: 99%

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Klehr

Wenzel

Fricke

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

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Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling.Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses.In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M 2 lat ~ 1.1 and M 2 ver ~ 1.2 up to 4 W pulse power.

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“…Harth et al used a DFB laser operated CW and a PA consisting of pulsed modulator and amplifier sections [9]. The modulator is normally inversed biased so that the coupled beam of the DFB laser is absorbed.…”

Section: Introductionmentioning

confidence: 99%

“…In this work a MOPA system similar to that one used in [9] will be presented. However, particular attention is paid to obtain a stable emission wavelength with a small spectral linewidth below 10 pm and a high peak power of more than 10 W in order to meet the requirements of DIAL applications.…”

Section: Introductionmentioning

confidence: 99%

Wavelength stabilized ns-MOPA diode laser system with 16 W peak power and a spectral line width below 10 pm

Klehr

Sumpf

et al. 2014

Semicond. Sci. Technol.

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A master oscillator power amplifier system for the generation of ns-pulses with high peak power, stabilized wavelength and narrow spectral line width will be presented. The master oscillator is a distributed feedback (DFB) ridge waveguide (RW) laser. The tapered amplifier consists of three RW sections and one flared gain-guided section. The DFB laser is operated in continuous wave mode and emits at 1064 nm with a spectral line width below 10 pm. One RW section of the amplifier acts as an optical gate for pulse selection. The tapered section amplifies the generated optical pulse. By adjusting the delay time between the current pulses injected into the picker and into the tapered section, respectively, the power of the amplified spontaneous emission was reduced below 1% of the average laser power. For an optical pulse length of 2 ns, a peak power of 16 W was obtained. A side mode suppression ratio better than 46 dB was observed.

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High power laser pulses with voltage controlled durations of 400 – 1000 ps

Cited by 16 publications

References 11 publications

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Wavelength stabilized ns-MOPA diode laser system with 16 W peak power and a spectral line width below 10 pm

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