Wavelength stabilized ns-MOPA diode laser system with 16 W peak power and a spectral line width below 10 pm

Vu, Truong Nguyen Luan; Klehr, A.; Sumpf, B.; Wenzel, H.; Erbert, G.; Tränkle, G.

doi:10.1088/0268-1242/29/3/035012

Cited by 12 publications

(5 citation statements)

References 14 publications

(25 reference statements)

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“…However, in the aspect of compactness, many applications need small size and non-complex laser systems. Therefore, diode lasers and, in particular, DFB-MOPA diode lasers which have been developed recently [7,8] seem to be suitable substitution. In these reports, DFB-MOPA diode laser characteristics were demonstrated to nearly satisfy the demands for an expected solid-state laser: small size, high pulse repetition rate, high optical output power, and narrow optical spectrum.…”

Section: Introductionmentioning

confidence: 99%

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Nguyen¹

2019

Comm. in Phys.

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Detail characterization of the such laser diode is important for the applications. Electro-Optical and spectral characteristics of the high power 1064 nm DFB-MOPA lasers are investigated at room temperature as function of injection current. Beam quality is characterized by waist diameter and far-field divergence angle versus average optical output power. Beam propagation ratio M2 is defined at difference intensity levels from lateral beam profile giving more detail laser behaviors at high power.

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Section: Introductionmentioning

confidence: 99%

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Nguyen¹

2019

Comm. in Phys.

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“…To achieve high‐power nanosecond optical pulses in the tens and hundreds of watts range, gain‐switched broad area lasers [4] up to 180 W (100 ns pulse width, 1 kHz repetition rate), tapered lasers [5] or master oscillator power amplifier (MOPA) systems [6] are used. Moreover, Vu et al [7] presented an MOPA system where a ridge waveguide (RW) section is used to gate 15 ns pulses and which is amplified with a tapered section of 16 W pulse power.…”

Section: Introductionmentioning

confidence: 99%

Compact high‐current diode laser nanosecond‐pulse source with high efficiency and 13 µJ output energy

et al. 2015

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A compact gain-switched nanosecond diode laser pulse source at 920 nm with an output energy of 13 µJ is presented. The developed nanosecond electronic driver is based on GaN transistors and controlled by transistor-transistor logic compatible input pulses. A peak current of more than 430 A for 20-50 ns-long pulses with a repetition rate up to 100 kHz and an electrical efficiency of more than 50% is reached. About 50 ns optical pulses with a peak power of 250 W (13 µJ) are generated with a tapered ridge waveguide bar with 29 emitters. The rise and fall time of the pulses is about 13 ns.

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“…By using a continuous wave (CW) operated DFB laser diode as master oscillator (MO) the modulator was capable of switching the optical beam within a few hundred picoseconds, generating pulses with pulse durations of 400 -1000 ps and an energy of 650 pJ [9]. A MOPA system consisting of a DFB laser as MO and a tapered amplifier for the generation of ns-pulses with high peak power, stabilized wavelength and narrow spectral line width at 1064 nm was presented in [10]. Optical pulses with a length of 2 ns and a peak power of 16 W were reached.…”

Section: Introductionmentioning

confidence: 99%

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Klehr

Wenzel

Fricke

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

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Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling.Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses.In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M 2 lat ~ 1.1 and M 2 ver ~ 1.2 up to 4 W pulse power.

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Wavelength stabilized ns-MOPA diode laser system with 16 W peak power and a spectral line width below 10 pm

Cited by 12 publications

References 14 publications

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Compact high‐current diode laser nanosecond‐pulse source with high efficiency and 13 µJ output energy

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

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