Novel in-Plane Semiconductor Lasers XIV 2015
DOI: 10.1117/12.2075652
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Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Abstract: Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling.Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of di… Show more

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“…Short-pulsed 9xx-nm lasers have many attractive applications including medical instrumentation, spectroscopy, remote sensing, and free-space communication [6,7]. Solutions based on semiconductor devices have been proposed with electrically modulated distributed Bragg reflectors but can only generate Watt-level peak powers [8]. Among other solutions, ytterbium (Yb) doped fibers present high emission cross-section around 976 -980 nm when pumped around 915 nm [9].…”
Section: Introductionmentioning
confidence: 99%
“…Short-pulsed 9xx-nm lasers have many attractive applications including medical instrumentation, spectroscopy, remote sensing, and free-space communication [6,7]. Solutions based on semiconductor devices have been proposed with electrically modulated distributed Bragg reflectors but can only generate Watt-level peak powers [8]. Among other solutions, ytterbium (Yb) doped fibers present high emission cross-section around 976 -980 nm when pumped around 915 nm [9].…”
Section: Introductionmentioning
confidence: 99%